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The STGFL6NC60D is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the PowerMESH™ family, manufactured by STMicroelectronics. It features a 600 V collector-emitter breakdown voltage and a continuous collector current of 14 A at 25°C. The device utilizes a Tail-Less technology to achieve fast switching characteristics, with typical turn-on and turn-off delay times of 6.7 ns and 46 ns respectively. It operates within a junction temperature range of -55°C to +150°C and is housed in a TO-220-3 through-hole package.
Verify the specific ordering suffix 'L' against official STMicroelectronics documentation to confirm exact electrical parameters and availability status. Distributor listings may contain conflicting information regarding product lifecycle status. Ensure the component matches the required TO-220-3 package and RoHS compliance specifications before integration into the design.
Select this IGBT for designs requiring a balance between low on-state voltage drop and high-frequency operation. The PowerMESH™ technology provides an excellent trade-off between switching losses and conduction losses. Consider the thermal resistance and power dissipation limits when designing the heat sinking solution for continuous 14 A operation.
This component belongs to the STGP/STGPL series of 600 V IGBTs. It shares the PowerMESH™ architecture with other models like the STGP6NC60HD but offers different current ratings and switching speeds tailored for specific industrial and consumer applications. The 'L' suffix typically denotes specific tail-less processing variations within the broader PowerMESH portfolio.
Direct replacements include the STGP6NC60HD or STGD6NC60H-1, provided the pinout and thermal characteristics are compatible. Verify that the substitute part meets the specific switching speed requirements of the original design.