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Product Detailed Parameters
- Description：IGBT TRENCH FS 600V 40A TO-3PF
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：80 A
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 20A
- Power - Max：52 W
- Switching Energy：200µJ (on), 130µJ (off)
- Input Type：Standard
- Gate Charge：116 nC
- Td (on/off) @ 25°C：38ns/149ns
- Test Condition：400V, 20A, 15V
- Reverse Recovery Time (trr)：40 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3 Full Pack
- Supplier Device Package：TO-3PF
- Grade：-
- Qualification：-
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Overview
The STGFW20V60DF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the V series, utilizing Trench Gate Field-Stop technology. It features a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current (Ic) of 20 A at 25°C, with a pulsed current rating of 40 A. The device operates within a junction temperature range of -55°C to +175°C and has a power dissipation (Pd) of 52 W. Packaged in a TO-3PF through-hole configuration, it exhibits a collector-emitter saturation voltage of 1.8 V and a gate-emitter voltage limit of ±20 V.
Feature Summary
- Trench Gate Field-Stop architecture for optimized switching performance
- High-speed operation capabilities suitable for high-frequency converters
- Robust thermal management with a wide operating temperature range
Applications
- High-speed motor drives
- Switch-mode power supplies
- Induction heating systems
Procurement Notes
This component is officially designated as End-of-Life (EOL) by STMicroelectronics. Manufacturers have announced that production will cease, making new units unavailable through standard distribution channels. Designers must verify current stock availability with authorized distributors and prepare for obsolescence management. Sourcing should focus on remaining inventory or qualified replacement components to ensure supply chain continuity for existing products.
Selection Notes
Select this IGBT when a 600 V rating and 20 A continuous current are required in a TO-3PF package. The Trench Gate Field-Stop technology offers a balance between low conduction loss and fast switching speed. Verify that the application's thermal design can handle the 52 W power dissipation limit without exceeding the 175°C maximum junction temperature. Ensure the drive circuit supports the specified ±20 V gate-emitter voltage limits.
Part Context
The STGFW20V60DF belongs to STMicroelectronics' V series of IGBTs, which employ advanced Trench Gate Field-Stop technology. This series is engineered for high-efficiency applications requiring fast switching speeds. The 'W' suffix typically denotes specific packaging or pinout variations within the family, while 'DF' indicates the dual-freewheeling diode configuration integrated into the module structure.
Replacement Considerations
STGW20V60F: Similar 600 V, 20 A IGBT in TO-247 package with identical electrical ratings but different thermal characteristics. STGP20V60F: Comparable 600 V, 20 A IGBT in TO-220 package, also featuring Trench Gate Field-Stop technology.
