STGFW20V60F

STGFW20V60F

$2.84
  • Description:IGBT TRENCH FS 600V 40A TO-3PF
  • Series:-

SKU:9c7ec39f7684 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT TRENCH FS 600V 40A TO-3PF
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tube
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):40 A
  • Current - Collector Pulsed (Icm):80 A
  • Vce(on) (Max) @ Vge, Ic:2.2V @ 15V, 20A
  • Power - Max:52 W
  • Switching Energy:200µJ (on), 130µJ (off)
  • Input Type:Standard
  • Gate Charge:116 nC
  • Td (on/off) @ 25°C:38ns/149ns
  • Test Condition:400V, 20A, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-3P-3 Full Pack
  • Supplier Device Package:TO-3PF
  • Grade:-
  • Qualification:-

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STGFW20V60F

Overview

The STGFW20V60F is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. It utilizes TrenchGate Field-Stop technology to achieve very high switching speeds within the V series. The device features a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current (Ic) of 20 A at 25°C, with a pulsed current capability of 40 A. It is housed in a TO-3PFL package designed for through-hole mounting. Key electrical parameters include a collector-emitter saturation voltage (VCEsat) of 1.8 V, a maximum power dissipation (Pd) of 52 W, and a gate-emitter voltage range of -20 V to +20 V. The component operates within a temperature range of -55°C to +175°C.

Feature Summary

  • TrenchGate Field-Stop structure enables very high speed switching performance.

Applications

  • High frequency converters
  • Motor drives
  • Power supplies

Procurement Notes

Verify the specific ordering suffix and RoHS compliance status directly with the manufacturer or authorized distributors before procurement. Confirm that the TO-3PFL package dimensions match the target PCB footprint requirements. Ensure that the thermal management design accommodates the 52 W power dissipation limit under expected operating conditions.

Selection Notes

Select this component when a 600 V IGBT with high switching speed is required in a TO-3PFL package. Compare the 1.8 V saturation voltage against alternative packages like TO-247 or TO-220 if higher current capacity or lower thermal resistance is needed. Verify that the 20 A continuous current rating meets the application's peak load requirements.

Part Context

This part belongs to the STMicroelectronics V series of IGBTs, which are characterized by TrenchGate Field-Stop technology. This series is engineered to optimize the trade-off between conduction and switching losses, making it suitable for applications demanding high efficiency at elevated switching frequencies.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult official STMicroelectronics replacement guides or datasheets for cross-reference information regarding equivalent devices in different packages or with modified specifications.

STGFW20V60FSTGFW20V60F
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