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Product Detailed Parameters
- Description：IGBT 600V 36A TO-3PF
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：36 A
- Current - Collector Pulsed (Icm)：100 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 20A
- Power - Max：80 W
- Switching Energy：220µJ (on), 330µJ (off)
- Input Type：Standard
- Gate Charge：100 nC
- Td (on/off) @ 25°C：31ns/100ns
- Test Condition：390V, 20A, 3.3Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3 Full Pack
- Supplier Device Package：TO-3PF
- Grade：-
- Qualification：-
Download product information
Overview
The STGFW30NC60V is a very fast N-channel IGBT developed using advanced PowerMESH™ technology, designed for an excellent trade-off between switching performance and low on-state behavior. It features a collector-emitter voltage (VCES) of 600 V and a continuous collector current (IC) of 36 A at 25 °C. The device operates within a junction temperature range of -55 to 150 °C and includes insulation withstand capability of 2500 V RMS. Packaged in TO-3PF with tube packaging, it supports high-frequency operation up to 50 kHz.
Feature Summary
- Very fast switching characteristics optimized for resonant or soft-switching applications
- Lower CRES/CIES ratio to eliminate cross-conduction susceptibility
- High current capability with robust short-circuit withstand time
- Advanced PowerMESH™ process ensuring low on-state voltage drop
Applications
- High frequency inverters
- UPS systems and motor drivers
- HF, SMPS and PFC in both hard switch and resonant topologies
Procurement Notes
Verify component authenticity through authorized distributors as the part is marked obsolete. Confirm package integrity and pin alignment against TO-3PF specifications before integration. Review datasheet revision history for any parameter updates. Ensure thermal management design accounts for the specified junction-to-case resistance values during operation.
Selection Notes
Select this component for designs requiring high-frequency switching up to 50 kHz with minimal cross-conduction risks. Evaluate thermal constraints carefully given the 80 W total dissipation rating at 25 °C case temperature. Consider the 600 V breakdown voltage margin for system voltage spikes. Verify gate drive requirements align with the ±20 V maximum gate-emitter voltage limits.
Part Context
This device belongs to STMicroelectronics' PowerMESH™ IGBT family, utilizing patented strip layout technology for high-voltage applications. It represents a generation of devices focused on optimizing the balance between conduction losses and switching speeds. The TO-3PF package provides robust mechanical stability and efficient heat dissipation capabilities for industrial power electronics.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Consult official STMicroelectronics replacement guides for equivalent series components.
