STGFW30V60DF

STGFW30V60DF

$1.21
  • Description:IGBT TRENCH FS 600V 60A TO-3PF
  • Series:-

SKU:276c9e3f58c7 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT TRENCH FS 600V 60A TO-3PF
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tube
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):60 A
  • Current - Collector Pulsed (Icm):120 A
  • Vce(on) (Max) @ Vge, Ic:2.3V @ 15V, 30A
  • Power - Max:58 W
  • Switching Energy:383µJ (on), 233µJ (off)
  • Input Type:Standard
  • Gate Charge:163 nC
  • Td (on/off) @ 25°C:45ns/189ns
  • Test Condition:400V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr):53 ns
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-3P-3 Full Pack
  • Supplier Device Package:TO-3PF
  • Grade:-
  • Qualification:-

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STGFW30V60DF

Overview

The STGFW30V60DF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the V series, manufactured by STMicroelectronics. It utilizes a trench gate field-stop structure and is housed in a TO-247 package for through-hole mounting. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 30 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.85 V typical value, a maximum power dissipation of 258 W, and a junction temperature range from -55°C to +175°C.

Feature Summary

  • Trench gate field-stop technology for optimized switching performance
  • Tail-less switching off characteristics
  • Positive VCE(sat) temperature coefficient for safe paralleling
  • Very fast soft recovery antiparallel diode

Applications

  • High frequency converters
  • Motor control applications
  • Power supply designs

Procurement Notes

Verify component authenticity and datasheet revisions before integration. Confirm that the specific suffix matches the required electrical tolerances and packaging format. Ensure thermal management solutions align with the specified power dissipation limits and operating temperature ranges defined in the official documentation.

Selection Notes

Select this component when designing circuits requiring high efficiency at very high frequencies. The tight parameter distribution facilitates reliable parallel operation. Consider the trade-off between conduction and switching losses inherent to the V series architecture for optimal system performance.

Part Context

This IGBT belongs to the V series family, which focuses on balancing conduction and switching losses. It shares structural similarities with other models like the STGW30V60DF but is distinguished by its specific packaging and detailed electrical characteristics within the trench gate field-stop lineup.

Replacement Considerations

Direct substitutes may include other V series IGBTs with matching voltage and current ratings. Verify pin compatibility and thermal resistance values when considering alternative part numbers from the same manufacturer.

STGFW30V60DFSTGFW30V60DF
$1.21
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