ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 80A TO-3PF-3
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：160 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 40A
- Power - Max：62.5 W
- Switching Energy：498µJ (on), 363µJ (off)
- Input Type：Standard
- Gate Charge：210 nC
- Td (on/off) @ 25°C：40ns/142ns
- Test Condition：400V, 40A, 5Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3 Full Pack
- Supplier Device Package：TO-3PF-3
- Grade：-
- Qualification：-
Download product information
Overview
The STGFW40H65FB is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the HB series, manufactured by STMicroelectronics. It utilizes a trench gate field-stop structure to optimize the balance between conduction and switching losses. The device features a maximum collector-emitter voltage of 650 V and a continuous collector current of 80 A at 25°C. It operates within a junction temperature range of -55°C to +175°C and is housed in a TO-247 package for through-hole mounting.
Feature Summary
- Advanced trench gate field-stop technology for high-speed switching
- Optimized trade-off between conduction and switching losses
- Slightly positive VCE(sat) temperature coefficient for safe paralleling
- Minimized tail current for reduced switching stress
Applications
- High-efficiency frequency converters
- Industrial motor drives
- Switch-mode power supplies
Procurement Notes
Verify the exact part number against official STMicroelectronics documentation before procurement. Confirm that the specific suffix matches the required electrical characteristics and packaging type. Ensure compliance with RoHS standards as indicated in the datasheet. Check for any lifecycle status updates regarding availability or obsolescence directly from the manufacturer.
Selection Notes
Select this component when designing circuits requiring high commutation speeds and low thermal resistance. The tight parameter distribution supports reliable parallel operation for higher current applications. Consider the 650V blocking capability and 80A current rating relative to the system's peak load requirements and thermal management constraints.
Part Context
This IGBT belongs to the HB series, which represents an evolution in trench gate field-stop technology. It is designed to maximize efficiency in frequency converters by minimizing both conduction and switching losses. The series is characterized by its robust performance in high-power industrial applications where reliability and thermal stability are critical.
Replacement Considerations
Direct substitutes include other STMicroelectronics HB series IGBTs with similar voltage and current ratings, such as the STGB40H65FB. Verify pinout compatibility and thermal resistance values when considering alternative models from different manufacturers.
