ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 60A H2PAK-2
- Series：-
- Mfr：STMicroelectronics
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：90 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 30A
- Power - Max：260 W
- Switching Energy：555µJ (on), 300µJ (off)
- Input Type：Standard
- Gate Charge：155 nC
- Td (on/off) @ 25°C：24ns/170ns
- Test Condition：400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr)：28 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：H2PAK-2
- Grade：Automotive
- Qualification：AEC-Q101
Download product information
Overview
The STGH30H65DFB-2AG is an N-channel IGBT from the HB series, utilizing a trench gate field-stop structure. It features a 650 V collector-emitter voltage and a continuous collector current of 60 A at 25 °C case temperature. The device operates with a maximum junction temperature of 175 °C and includes a co-packaged antiparallel diode. Key electrical parameters include a typical VCE(sat) of 1.55 V at 30 A and a total switching energy of 855 µJ at 400 V. It is supplied in an H²PAK-2 surface-mount package.
Feature Summary
- AEC-Q101 qualified for automotive reliability
- Optimized high-speed switching performance
- Slightly positive VCE(sat) temperature coefficient for safer paralleling
- Soft and very fast recovery antiparallel diode
Applications
- DC/DC converters for electric vehicles (EV) and hybrid electric vehicles (HEV)
- HVAC and climate control systems
Procurement Notes
Verify the specific ordering code STGH30H65DFB-2AG against the manufacturer's official documentation to ensure correct component identification. Confirm that the H²PAK-2 package type and tape-and-reel packing method align with your automated assembly requirements. Check for any recent product change notifications or revision updates before finalizing procurement specifications.
Selection Notes
Select this component when designing circuits requiring AEC-Q101 qualification and high-frequency operation up to 175 °C junction temperature. Ensure the thermal management design accommodates the specified RthJC values. Verify that the gate drive circuitry supports the required ±20 V rating and that the load conditions remain within the forward bias safe operating area limits defined in the datasheet.
Part Context
This part belongs to the HB series of IGBTs developed by STMicroelectronics. The series utilizes an advanced proprietary trench gate field-stop structure designed to balance conduction and switching losses. It represents an evolution in efficiency optimization for frequency converters, specifically targeting applications where high speed and low thermal resistance are critical.
Replacement Considerations
Consult the manufacturer's official cross-reference data for verified substitutes. Ensure any replacement maintains the same voltage rating, current capacity, and package dimensions. Verify that alternative components also meet AEC-Q101 standards if automotive qualification is required for the application.
