ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 20A TO-220
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：20 A
- Current - Collector Pulsed (Icm)：40 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 10A
- Power - Max：115 W
- Switching Energy：120µJ (on), 270µJ (off)
- Input Type：Standard
- Gate Charge：28 nC
- Td (on/off) @ 25°C：19ns/91ns
- Test Condition：400V, 10A, 22Ohm, 15V
- Reverse Recovery Time (trr)：96 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220
- Grade：-
- Qualification：-
Download product information
Overview
The STGP10M65DF2 is a trench gate field-stop IGBT from the M series, designed for low-loss applications. It features a maximum collector-emitter voltage of 650 V and a continuous collector current of 10 A at 25 °C. The typical saturation voltage (VCE(sat)) is 1.55 V at IC = 10 A. The device supports a maximum junction temperature of 175 °C and offers a short-circuit withstand time of 6 µs. It utilizes an advanced proprietary structure to balance inverter system performance with efficiency.
Feature Summary
- Advanced proprietary trench gate field-stop structure for optimized performance
- Positive VCE(sat) temperature coefficient enabling safer paralleling operation
- Soft and very fast recovery antiparallel diode characteristics
- Tight parameter distribution for consistent device behavior
Applications
- Inverter systems requiring low-loss switching
- Applications where short-circuit functionality is essential
- Efficiency-critical power conversion designs
Procurement Notes
Verify the specific datasheet version and ordering information directly with STMicroelectronics or authorized distributors. Confirm package details and electrical specifications match the design requirements before procurement. Ensure compliance with RoHS directives as indicated in official documentation.
Selection Notes
Select this component for designs prioritizing low conduction losses and robust short-circuit handling within the 650 V range. The positive temperature coefficient facilitates parallel operation without complex current sharing circuits. Evaluate thermal management needs based on the specified power dissipation and junction temperature limits.
Part Context
This part belongs to the STMicroelectronics M series of IGBTs. The series focuses on balancing inverter performance and efficiency through low-loss technology and short-circuit capability. Other members include variants with different current ratings and packages, such as the STGB10M65DF2.
Replacement Considerations
The STGB10M65DF2 is a documented alternative within the same M series, offering identical electrical characteristics but housed in a D2PAK package instead of the TO-220FP-3 package used by the STGP10M65DF2.
