ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT 600V 29A TO-220
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：29 A
- Current - Collector Pulsed (Icm)：80 A
- Vce(on) (Max) @ Vge, Ic：1.75V @ 15V, 10A
- Power - Max：80 W
- Switching Energy：600µJ (on), 5mJ (off)
- Input Type：Standard
- Gate Charge：33 nC
- Td (on/off) @ 25°C：700ns/1.2µs
- Test Condition：480V, 10A, 1kOhm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220
- Grade：-
- Qualification：-
Download product information
Overview
The STGP10NB60S is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. It features a collector-emitter breakdown voltage of 600 V and a continuous collector current of 20 A at 25°C. The device utilizes the PowerMESH™ process for optimized performance. Key electrical parameters include a maximum collector-emitter saturation voltage of 1.7 V, a gate-emitter leakage current of 100 nA, and a power dissipation rating of 80 W. It operates within a temperature range of -55°C to +150°C junction temperature.
Feature Summary
- Utilizes advanced PowerMESH™ technology for improved switching and conduction characteristics
- Designed with high current capability suitable for robust industrial applications
- Features low on-state voltage drop to enhance efficiency in low-frequency operations
Applications
- Motor control systems
- Switched-mode power supplies
- Industrial inverters
Procurement Notes
Verify the specific ordering suffix and package variant against the manufacturer's official datasheet before procurement. Confirm that the component meets required RoHS compliance standards and check for any recent product change notifications regarding availability or manufacturing location changes.
Selection Notes
Select this component when a 600 V IGBT with 20 A continuous current capacity is required. Ensure the thermal management design supports an 80 W dissipation rating. Verify that the gate drive voltage aligns with the specified limits and that the application frequency matches the device's switching capabilities.
Part Context
This part belongs to the STGP10NB series of single IGBTs from STMicroelectronics. It is designed for general-purpose switching applications requiring high reliability. The PowerMESH™ process distinguishes it from standard IGBTs by offering a better trade-off between on-state voltage drop and switching losses.
Replacement Considerations
Direct replacements must match the 600 V / 20 A / TO-220-3 specifications. Consider parts like the STGP10NC60HD for similar performance profiles. Verify pinout compatibility and thermal resistance values before substituting.
