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Product Detailed Parameters
- Description：IGBT 600V 29A TO-220
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：29 A
- Current - Collector Pulsed (Icm)：80 A
- Vce(on) (Max) @ Vge, Ic：1.75V @ 15V, 10A
- Power - Max：80 W
- Switching Energy：600µJ (on), 5mJ (off)
- Input Type：Standard
- Gate Charge：33 nC
- Td (on/off) @ 25°C：700ns/1.2µs
- Test Condition：480V, 10A, 1kOhm, 15V
- Reverse Recovery Time (trr)：37 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220
- Grade：-
- Qualification：-
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Overview
The STGP10NB60SD is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. It utilizes the Power MESH™ process to achieve low on-state voltage drop in low-frequency applications up to 1 kHz. The device features a collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 20 A, with a maximum power dissipation of 80 W at case temperature. It integrates an antiparallel diode characterized by soft and ultra-fast recovery properties. The component operates within a junction temperature range of -65 °C to +150 °C and is housed in a TO-220-3 through-hole package.
Feature Summary
- Utilizes advanced Power MESH™ technology for optimized low-frequency performance
- Integrates a very soft ultra-fast recovery antiparallel diode
- Designed for high current capability with low on-voltage drop
Applications
- Low-frequency switching applications up to 1 kHz
- Power conversion systems requiring high current handling
- Industrial motor control circuits
Procurement Notes
Verify component authenticity through authorized STMicroelectronics distributors or certified partners. Confirm the specific manufacturing lot date code against current production status, as this part may be subject to obsolescence notices. Ensure that the ordering suffix matches the required packaging configuration. Request official datasheets and compliance certificates prior to finalizing procurement orders.
Selection Notes
Select this IGBT for designs prioritizing low conduction losses in low-frequency hard-switching environments. Evaluate the thermal management requirements based on the 80 W power dissipation rating. Consider the integrated diode's recovery characteristics when designing snubber circuits or freewheeling paths. Compare switching energy values against alternative devices if higher frequency operation is required.
Part Context
This component belongs to the STGP10NB series of Power MESH™ IGBTs. It shares the same core technology and voltage class as other variants like the STGB10NB60ST4, though package and current ratings differ. The series is designed to provide a trade-off between switching performance and on-state behavior for general-purpose power electronics.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing gate drive voltages and thermal constraints before considering any cross-reference.
