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Product Detailed Parameters
- Description：IGBT 600V 20A TO-220
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：20 A
- Current - Collector Pulsed (Icm)：30 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 5A
- Power - Max：65 W
- Switching Energy：31.8µJ (on), 95µJ (off)
- Input Type：Standard
- Gate Charge：19.2 nC
- Td (on/off) @ 25°C：14.2ns/72ns
- Test Condition：390V, 5A, 10Ohm, 15V
- Reverse Recovery Time (trr)：22 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220
- Grade：-
- Qualification：-
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Overview
The STGP10NC60HD is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics using the PowerMESH™ process. It features a TO-220-3 through-hole package and operates with a maximum collector-emitter voltage of 600 V. The device supports a continuous collector current of 20 A at 25 °C, with a typical saturation voltage of 1.9 V. Maximum gate-emitter voltage limits are set at ±20 V, while power dissipation reaches 56 W. The component functions within a temperature range of -55 °C to +150 °C junction temperature.
Feature Summary
- Utilizes advanced PowerMESH™ technology for optimized switching performance and low on-state behavior
- Incorporates a very soft ultra-fast recovery antiparallel diode
- Features a low C_RES / C_IES ratio to prevent cross-conduction susceptibility
Applications
- Switch Mode Power Supplies (SMPS)
- Power Factor Correction (PFC) circuits
- Hard-switching applications
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to ensure correct electrical characteristics and packaging configuration. Confirm RoHS compliance status directly from the datasheet before integration into designs requiring environmental certification.
Selection Notes
Select this component when a balance between low conduction losses and fast switching speeds is required. The integrated anti-parallel diode simplifies circuit topology for hard-switching topologies. Ensure thermal management solutions accommodate the specified 56 W power dissipation rating under expected operating conditions.
Part Context
This IGBT belongs to the STGP10NC60 series, part of the PowerMESH™ family designed for high-frequency efficiency. The 'H' suffix indicates optimization for high-frequency applications, reducing fall time while maintaining low voltage drop compared to standard variants in the lineup.
Replacement Considerations
Cross-reference with other PowerMESH™ devices such as the STGP6NC60HD or STGD10NC60KDT4 for similar form factors. Verify pinout compatibility and electrical ratings match before substituting in existing PCB layouts.
