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The STGP10NC60K is a single N-channel IGBT from STMicroelectronics, utilizing the PowerMESH technology. It features a collector-emitter voltage (VCEO) of 600 V and a continuous collector current (Ic) of 20 A at 25 °C. The device has a maximum power dissipation of 80 W at case temperature and operates within a junction temperature range of -55 °C to +150 °C. Packaged in a TO-220-3 through-hole housing, it integrates an antiparallel diode with ultra-fast recovery characteristics.
Verify the specific suffix against official datasheets to confirm electrical parameters and package type. Ensure the component matches the required voltage and current ratings for the target circuit design before procurement.
Select this component for designs requiring high-speed switching with low conduction losses. Consider the thermal management requirements due to the 80 W power dissipation rating and ensure the gate drive voltage aligns with the specified limits.
This part belongs to the STGP series of fast IGBTs developed using PowerMESH technology. It is designed to provide an excellent trade-off between switching performance and low on-state voltage drop, suitable for demanding power electronics applications.
Potential substitutes include STGP10NC60HD and STGB10NC60KDT4. Verify pin compatibility and electrical specifications such as saturation voltage and switching times before substitution.