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Product Detailed Parameters
- Description：IGBT 600V 25A TO-220
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：25 A
- Current - Collector Pulsed (Icm)：50 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 7A
- Power - Max：95 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：390V, 7A, 10Ohm, 15V
- Reverse Recovery Time (trr)：37 ns
- Operating Temperature：-
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220
- Grade：-
- Qualification：-
Download product information
Overview
The STGP14N60D is a short-circuit rugged IGBT rated at 600 V collector-emitter voltage and 14 A continuous collector current. It utilizes the PowerMESH™ process for optimized switching and conduction performance. Key electrical ratings include a maximum operating junction temperature of 175 °C, a short-circuit withstand time of 5 µs, and a gate-emitter voltage limit of ±20 V. The device features an ultra-fast soft recovery antiparallel diode with a forward voltage of 1.8 V at 7 A. Static characteristics specify a collector-emitter saturation voltage of 2.1 V at 7 A and a threshold voltage range of 4.5 to 6.5 V.
Feature Summary
- Short-circuit rugged design capable of withstanding fault conditions
- Advanced PowerMESH™ technology balancing switching speed and low on-state loss
- Low C res / C ies ratio preventing cross-conduction susceptibility
- Ultra-fast soft recovery integrated antiparallel diode
Applications
- Motor drives
- High frequency inverters
- SMPS and PFC in both hard switch and resonant topologies
Procurement Notes
This component is classified as obsolete by the manufacturer. Verification of availability requires checking distributor archives or secondary markets. Designers should confirm the final status of any specific lot before procurement. Replacement strategies must be initiated immediately due to discontinuation. Ensure all technical specifications match the legacy system requirements during the transition phase.
Selection Notes
Select this part for applications requiring high thermal stability up to 175 °C and robust short-circuit protection. The TO-220 package provides adequate thermal dissipation for moderate power levels. Verify that the 5 µs short-circuit withstand time aligns with the protection circuitry response speed. Consider the 600 V rating for standard industrial voltage systems.
Part Context
The STGP14N60D belongs to the STMicroelectronics IGBT family utilizing PowerMESH™ technology. It is designed for medium-power switching applications where reliability under fault conditions is critical. The device integrates a fast recovery diode to support inductive load switching. This specific model represents an older generation compared to newer short-circuit rugged variants.
Replacement Considerations
STGP14NC60KD
FAQ
What is the short-circuit withstand time for the STGP14N60D?
The short-circuit withstand time is 5 µs, measured at TC = 125 °C, RG = 10 Ω, and VGE = 15 V.
Does the STGP14N60D have a built-in diode?
Yes, it includes an ultra-fast soft recovery antiparallel diode.
What is the maximum operating junction temperature?
The maximum operating junction temperature is 175 °C.
