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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 40A TO-220
- Series：-
- Mfr：STMicroelectronics
- Package：Bulk
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：60 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 20A
- Power - Max：147 W
- Switching Energy：265µJ (on), 214µJ (off)
- Input Type：Standard
- Gate Charge：56 nC
- Td (on/off) @ 25°C：16ns/78.8ns
- Test Condition：400V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr)：215 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220
- Grade：-
- Qualification：-
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Overview
The STGP20H65DFB2 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the HB2 series, manufactured by STMicroelectronics. It utilizes an advanced trench gate field-stop structure and operates with a maximum collector-emitter voltage of 650 V and a continuous collector current of 20 A at 25 °C. The device features a low saturation voltage of 1.65 V typical value and includes a co-packaged ultra-fast soft recovery diode in antiparallel configuration. Designed for high-speed applications, it supports a maximum junction temperature of 175 °C and offers tight parameter distribution to ensure safe paralleling operation.
Feature Summary
- Advanced trench gate field-stop structure optimized for conduction and switching performance
- Co-packaged ultra-fast soft recovery diode for efficient fast application designs
- Positive VCE(sat) temperature coefficient enabling safer parallel operation
- Minimized tail current and tight parameter distribution for consistent performance
Applications
- High-frequency power converters requiring optimized efficiency
- Fast switching applications utilizing the integrated anti-parallel diode
- Industrial motor drives and inverters demanding reliable paralleling capabilities
Procurement Notes
Verify the specific ordering suffix against official datasheets to confirm package type and electrical characteristics, as variations may exist within the product line. Ensure compliance with RoHS directives if required by your design specifications. Cross-reference the manufacturer part number with authorized distributors to confirm current availability and lead times before finalizing procurement plans.
Selection Notes
Select this component when designing circuits that require a balance between low conduction losses and fast switching speeds. The integrated diode simplifies circuit topology by eliminating the need for external freewheeling diodes in certain configurations. Consider the thermal resistance and packaging options to ensure adequate heat dissipation for the intended power levels and operating environment.
Part Context
This IGBT belongs to the HB2 series, which represents an evolution of STMicroelectronics' proprietary trench gate field-stop technology. The series focuses on maximizing efficiency through improved VCE(sat) behavior at low currents and reduced switching energy. It is designed to offer an optimum compromise between conduction and switching losses for high-frequency converter applications.
Replacement Considerations
Direct replacements should be sought within the same HB2 series or comparable trench gate field-stop IGBTs from other manufacturers with matching 650 V ratings and similar current capacities. Verify pinout compatibility and thermal characteristics when substituting.
