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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 60A TO-220
- Series：-
- Mfr：STMicroelectronics
- Package：Bulk
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：90 A
- Vce(on) (Max) @ Vge, Ic：2.05V @ 15V, 30A
- Power - Max：180 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：80 nC
- Td (on/off) @ 25°C：-
- Test Condition：400V, 30A, 22Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220
- Grade：-
- Qualification：-
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Overview
The STGP30IH65DF is a trench gate field-stop IGBT from the IH series, rated for 650 V collector-emitter voltage and 30 A continuous collector current. It utilizes an advanced proprietary structure optimized for soft commutation applications, featuring minimized tail current and low conduction losses. The device includes a co-packaged freewheeling diode with a low forward voltage drop. Designed for high efficiency in resonant and soft-switching topologies, it operates with a maximum junction temperature of 175 °C and offers tight parameter distribution for safer paralleling.
Feature Summary
- Optimized for soft-commutation applications to maximize efficiency
- Advanced trench gate field-stop structure minimizes switching losses
- Co-packaged diode features low forward voltage drop
- Positive VCE(sat) temperature coefficient ensures safe paralleling
Applications
- Resonant converter circuits
- Soft-switching power supplies
- High-efficiency motor drives
Procurement Notes
Verify the specific suffix against official STMicroelectronics documentation to confirm exact electrical characteristics and package variations. Ensure compatibility with existing thermal management designs due to the 175 °C maximum junction rating. Cross-reference datasheet revisions to confirm pinout consistency before integration into production systems.
Selection Notes
Select this component specifically for soft-switching environments where minimizing tail current and conduction losses is critical. Evaluate the trade-off between the low VCE(sat) and switching performance relative to hard-switching alternatives. Confirm that the system topology aligns with the device's design optimization for resonant or quasi-resonant operation rather than standard PWM hard switching.
Part Context
This part belongs to the STMicroelectronics IH series, which focuses on soft-switching performance. It shares the trench gate field-stop technology found in other series but is tuned differently for resonant applications compared to the M or HB2 series designed for hard-switching or high-speed general-purpose use.
Replacement Considerations
Direct substitutes within the same series include the STGWA30IH65DF and STGW30IH65DF. Verify pinout and thermal resistance specifications when replacing with higher current variants like the STGWA50IH65DF to ensure mechanical fit.
