ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT 600V 60A TO-220
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：125 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 20A
- Power - Max：185 W
- Switching Energy：350µJ (on), 435µJ (off)
- Input Type：Standard
- Gate Charge：96 nC
- Td (on/off) @ 25°C：29ns/120ns
- Test Condition：480V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220
- Grade：-
- Qualification：-
Download product information
Overview
The STGP30NC60K is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. It features a collector-emitter breakdown voltage of 600 V and a maximum continuous collector current of 60 A. The device is housed in a TO-220 package for through-hole mounting. Key electrical parameters include a power dissipation rating of 185 W, a collector-emitter saturation voltage of 2.7 V at 15 V gate drive and 20 A current, and turn-on/turn-off times of 29 ns and 120 ns respectively at 25°C. The operating temperature range spans from -55°C to +150°C.
Feature Summary
- PowerMESH™ technology integration for optimized performance
- Ultra-fast switching characteristics with low turn-off tail current
- High short-circuit capability for robust operation
Applications
- Induction heating systems
- Motor control drives
- Uninterruptible Power Supplies (UPS)
- Switched-mode power supplies (SMPS)
Procurement Notes
Verify the specific ordering suffix and package variant against the official datasheet to ensure compatibility with thermal management requirements. Confirm that the component status matches project needs, as availability may vary. Cross-reference pinout configurations with existing PCB layouts to prevent installation errors during assembly processes.
Selection Notes
Select this component based on its 600 V blocking capability and 60 A current handling suitable for medium-power applications. Evaluate the thermal resistance of the TO-220 package against the expected power dissipation of 185 W. Ensure the gate drive circuitry supports the specified voltage levels and timing requirements for optimal switching performance.
Part Context
This IGBT belongs to the PowerMESH™ family, designed for high-efficiency power conversion. It utilizes advanced silicon technology to minimize conduction and switching losses. The device is engineered for reliability in demanding industrial environments, offering a balance between speed and ruggedness for various power electronics topologies.
Replacement Considerations
Direct substitutes include the STGP30NC60W, which shares similar electrical characteristics but may differ in packaging or specific switching parameters. Verify thermal and mechanical compatibility before substitution. Consult official replacement lists for updated series components if the original part is obsolete.
