STGP35N35LZ

Overview

The STGP35N35LZ is a single IGBT from the PowerMESH™ series, manufactured by STMicroelectronics. It features a collector-emitter breakdown voltage of 345 V and a maximum continuous collector current of 40 A at 25°C. The device has a typical saturation voltage of 1.7 V at 15 A with a 5 V gate drive. It operates within a junction temperature range of -55°C to 175°C and dissipates up to 176 W of power. Packaged in a TO-262 (I2PAK) through-hole housing, it includes an internal emitter-collector clamp diode for short-circuit immunity.

Feature Summary

• PowerMESH™ technology optimized for low on-state voltage
• Internal emitter-collector clamp diode for enhanced short-circuit robustness
• Logic-level gate drive capability
• High pulsed current handling

Applications

• Motor control applications
• Switching power supplies
• Induction heating systems

Procurement Notes

Verify component authenticity against manufacturer specifications before integration. Confirm package integrity and pin alignment match the TO-262 standard. Ensure storage conditions comply with moisture sensitivity level requirements to prevent soldering defects during assembly.

Selection Notes

Select this component when a 345 V rated IGBT with integrated clamping is required for high-reliability switching. Compare thermal resistance values against the specific heatsink design to ensure the 176 W power dissipation limit is not exceeded under worst-case operating temperatures.

Part Context

This part belongs to the STGB/STGP35N35LZ family of automotive-grade IGBTs. It shares core electrical characteristics with the STGB35N35LZ but may differ in specific qualification standards or packaging suffixes defined by the manufacturer's internal coding system.

Replacement Considerations

Direct substitutes include the STGB35N35LZ. Verify that any alternative maintains the same TO-262 footprint and 345 V / 40 A ratings to ensure mechanical and electrical compatibility.