STGP5H60DF

STGP5H60DF

$1.75
  • Description:IGBT TRENCH FS 600V 10A TO-220
  • Series:-

SKU:10f0062e95d4 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT TRENCH FS 600V 10A TO-220
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tube
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):10:00 AM
  • Current - Collector Pulsed (Icm):20 A
  • Vce(on) (Max) @ Vge, Ic:1.95V @ 15V, 5A
  • Power - Max:88 W
  • Switching Energy:56µJ (on), 78.5µJ (off)
  • Input Type:Standard
  • Gate Charge:43 nC
  • Td (on/off) @ 25°C:30ns/140ns
  • Test Condition:400V, 5A, 47Ohm, 15V
  • Reverse Recovery Time (trr):134.5 ns
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220
  • Grade:-
  • Qualification:-

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STGP5H60DF

Overview

The STGP5H60DF is an N-channel IGBT from the H series, utilizing a trench gate field-stop structure. It features a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current (Ic) of 10 A. The device operates with a switching speed of 1 MHz and has a maximum power dissipation (Pd) of 88 W. Key electrical parameters include a maximum gate-emitter voltage (VGEO) of ±20 V, a collector-emitter saturation voltage (VceSAT) of 1.95 V, and a rated energy of 221 mJ. It supports a wide operating temperature range from -55°C to 175°C and is housed in a TO-220 package for through-hole mounting.

Feature Summary

  • Advanced proprietary trench gate field-stop structure for optimized efficiency
  • Slightly positive VCE(sat) temperature coefficient enabling safer paralleling operation
  • Ultrafast soft recovery antiparallel diode integrated within the device

Applications

  • High switching frequency converters
  • Compressor solutions
  • Power management systems

Procurement Notes

Verify component authenticity by checking the manufacturer's marking on the TO-220 package against official datasheet specifications. Confirm the part status as active before procurement planning. Ensure that the ordering suffix matches the required packaging configuration. Cross-reference the specific lot codes with reliability reports if long-term supply stability is critical for the production timeline.

Selection Notes

Select this component when designing circuits requiring high-speed switching capabilities combined with low conduction losses. The tight parameter distribution makes it suitable for applications demanding precise current sharing in parallel configurations. Consider the thermal resistance characteristics and the 600 V rating to ensure compatibility with the system's voltage and heat dissipation requirements.

Part Context

This device belongs to the STMicroelectronics H series of IGBTs, which are engineered to balance conduction and switching losses. The series utilizes a trench gate field-stop technology to enhance performance in high-frequency applications. The STGP5H60DF specifically offers a 10 A current rating, distinguishing it from other variants in the family with different current capacities.

Replacement Considerations

STGD5H60DF and STGB5H60DF are alternative models within the same H series offering similar trench gate field-stop technology. Verify pinout compatibility and exact current ratings before substitution. Note that STGB5H60DF may have obsolete status depending on the region.

STGP5H60DFSTGP5H60DF
$1.75
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