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Product Detailed Parameters
- Description：IGBT 600V 25A TO-220
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：25 A
- Current - Collector Pulsed (Icm)：50 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 7A
- Power - Max：80 W
- Switching Energy：95µJ (on), 115µJ (off)
- Input Type：Standard
- Gate Charge：35 nC
- Td (on/off) @ 25°C：18.5ns/72ns
- Test Condition：390V, 7A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220
- Grade：-
- Qualification：-
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Overview
The STGP7NC60H is a very fast N-channel IGBT developed using advanced PowerMESH technology, offering an excellent trade-off between switching performance and low on-state behavior. It features a low collector-emitter saturation voltage (VCE(sat)) of 2.5 V maximum at TC = 100 °C and supports continuous collector currents up to 14 A under the same conditions. The device operates with a collector-emitter voltage rating of 600 V and includes a very soft ultra-fast recovery antiparallel diode. Designed for high-frequency applications, it is well-suited for resonant or soft-switching topologies.
Feature Summary
- Advanced PowerMESH technology ensures optimal balance between switching speed and conduction losses.
- Low CRES/CIES ratio prevents cross-conduction susceptibility in bridge configurations.
- Integrated ultra-fast recovery antiparallel diode provides very soft reverse recovery characteristics.
Applications
- Resonant converter circuits
- Soft-switching power supplies
- High-frequency inverters
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to confirm package type and tape-and-reel specifications. Ensure that the component grade matches industrial requirements. Cross-reference datasheet revision numbers to validate electrical parameters before finalizing procurement orders.
Selection Notes
Select this component for designs requiring high-frequency operation up to 70 kHz. Evaluate thermal resistance values relative to the intended heat sink configuration. Confirm that gate drive voltages remain within the specified ±20 V limits to ensure reliable switching performance and prevent device damage.
Part Context
This part belongs to the STMicroelectronics PowerMESH family of very fast IGBTs. It shares architectural similarities with models like the STGD7NC60HT4 but may differ in specific packaging or current ratings. The series is engineered for high-efficiency power conversion systems requiring robust switching capabilities.
Replacement Considerations
STGD7NC60HT4: Verify pinout compatibility and exact current ratings. STGP7NC60HD: Check if integrated diode characteristics match application requirements. Always consult official substitution guides for thermal and electrical equivalence.
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is 150 °C.
Does the device include an integrated diode?
Yes, it features a very soft ultra-fast recovery antiparallel diode.
What technology is used for the chip design?
It utilizes advanced PowerMESH technology for optimized performance.
