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Product Detailed Parameters
- Description：IGBT 600V 14A TO-220
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：14 A
- Current - Collector Pulsed (Icm)：18 A
- Vce(on) (Max) @ Vge, Ic：2.9V @ 15V, 3A
- Power - Max：56 W
- Switching Energy：46.5µJ (on), 23.5µJ (off)
- Input Type：Standard
- Gate Charge：12 nC
- Td (on/off) @ 25°C：6.7ns/46ns
- Test Condition：390V, 3A, 10Ohm, 15V
- Reverse Recovery Time (trr)：50 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220
- Grade：-
- Qualification：-
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Overview
The STGPL6NC60D is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the PowerMESH™ series, manufactured by STMicroelectronics. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 14 A at 25°C. The device is housed in a TO-220 through-hole package with a maximum power dissipation of 56 W. Key electrical parameters include a gate charge of 12 nC, a saturation voltage of 2.9 V at 15 V gate drive and 3 A collector current, and a reverse recovery time of 50 ns. Switching times are specified as 6.7 ns turn-on and 46 ns turn-off under test conditions of 390 V, 3 A, 10 Ω, and 15 V.
Feature Summary
- PowerMESH™ technology providing optimized trade-off between switching performance and low on-state behavior
- Integrated ultra-fast recovery antiparallel diode for efficient commutation
- Low CRES/CIES ratio to minimize susceptibility to cross-conduction
Applications
- Switched-mode power supplies (SMPS)
- Power factor correction (PFC) circuits
- Hard-switching and resonant converter topologies
Procurement Notes
Verify component authenticity via official STMicroelectronics channels or authorized distributors. Confirm RoHS3 compliance status and check for obsolescence notices, as this part may be discontinued. Ensure storage conditions meet moisture sensitivity level requirements before soldering.
Selection Notes
Select this IGBT for applications requiring 600 V blocking capability and moderate current handling up to 14 A. Consider the 2.9 V saturation voltage for conduction loss calculations. Verify that the thermal management solution supports the 56 W power dissipation limit within the -55°C to 150°C junction temperature range.
Part Context
This component belongs to the STGPxL6NC60D family of PowerMESH™ IGBTs. These devices utilize advanced strip layout technology to achieve high-frequency operation capabilities while maintaining low voltage drops. The family is designed for robust performance in general-purpose power electronics.
Replacement Considerations
Direct substitutes within the same PowerMESH™ family include STGP6NC60HD and STGP8NC60KD. Verify pin compatibility and electrical parameter alignment, particularly regarding saturation voltage and switching speeds, before implementation.
