STGSH80HB65DAG

Overview

The STGSH80HB65DAG is an automotive-grade half-bridge IGBT module from the HB series, packaged in ACEPACK SMIT. It integrates two N-channel IGBTs and antiparallel diodes for high-speed switching applications. Key electrical ratings include a collector-emitter voltage (VCEO) of 650 V and a continuous collector current (IC) of 83 A at TC = 25 °C. The typical saturation voltage (VCE(sat)) is 1.7 V at IC = 80 A. Total power dissipation is rated at 250 W at TC = 25 °C. Thermal resistance from junction to case is 0.6 °C/W for the IGBT and 0.8 °C/W for the diode. The device operates within a junction temperature range of -55 °C to +175 °C and features an isolation withstand voltage of 3.4 kVrms.

Feature Summary

• AQG 324 qualified for automotive reliability standards
• Optimized for soft commutation with minimized tail current and low thermal resistance
• Integrated fast recovery antiparallel diode with positive temperature coefficient for VCE(sat)
• High-voltage isolation rating of 3.4 kVrms between pins and heat sink plate

Applications

• DC/DC converters for electric vehicles (EV) and hybrid electric vehicles (HEV)
• On-board chargers (OBC)
• Resonant and soft-switching power conversion systems

Procurement Notes

Verify component authenticity through authorized STMicroelectronics distributors or direct channels. Confirm package integrity upon receipt, as surface-mount modules require careful handling. Ensure storage conditions comply with moisture sensitivity levels specified in the datasheet. Request batch-specific test reports if required for automotive quality assurance processes.

Selection Notes

Select this component for designs requiring high efficiency in resonant topologies due to its optimized switching characteristics. Evaluate thermal management requirements against the 0.6 °C/W junction-to-case resistance. Ensure gate drive circuits support the ±20 V maximum rating and consider the total gate charge of 456 nC for driver sizing. Verify that the application voltage does not exceed the 650 V breakdown limit under all operating transients.

Part Context

This part belongs to STMicroelectronics' HB series IGBTs, specifically designed for automotive traction and auxiliary power systems. It utilizes silicon technology within the ACEPACK SMIT package to provide a compact, rugged solution for high-power density applications. The series emphasizes reduced conduction and switching losses to enhance overall system efficiency in electric vehicle architectures.

Replacement Considerations

Direct pin-compatible replacements within the same package family should be verified against the latest ST product selection guide. Cross-referencing electrical parameters such as VCE(sat), switching energies, and thermal resistance is essential. Any substitute must meet or exceed the AQG 324 qualification standard for automotive use.