STGW10M65DF2

Overview

The STGW10M65DF2 is a trench gate field-stop IGBT from the M series, rated at 650 V and 10 A. It features a typical collector-emitter saturation voltage (VCE(sat)) of 1.55 V at IC = 10 A. The device supports a maximum junction temperature (TJ) of 175 °C and offers a short-circuit withstand time of 6 µs. It utilizes an advanced proprietary structure to balance inverter system performance with efficiency.

Feature Summary

• Advanced trench gate field-stop structure for low-loss operation
• Positive VCE(sat) temperature coefficient enabling safer paralleling
• Soft and very fast recovery antiparallel diode
• Low thermal resistance design

Applications

• Inverter systems requiring low-loss and short-circuit functionality
• Motor control applications
• Power supplies

Procurement Notes

Verify the specific package type and suffix against official datasheets before ordering. Confirm availability through authorized distributors as lead times may vary. Ensure the component matches the required electrical ratings for the target application.

Selection Notes

Select this component for designs prioritizing efficiency and robustness in medium-power switching applications. Consider the positive temperature coefficient for parallel configurations. Verify thermal management requirements given the 175 °C maximum junction temperature capability.

Part Context

This part belongs to STMicroelectronics' M series IGBTs, which are designed for optimal balance between inverter system performance and efficiency. The series emphasizes low-loss characteristics and short-circuit functionality, making it suitable for demanding power electronics environments.

Replacement Considerations

Check for direct substitutes within the same M series or comparable trench gate field-stop IGBTs from other manufacturers. Ensure voltage, current, and package compatibility when considering alternatives.