SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The STGW15S120DF3 is a single IGBT from STMicroelectronics utilizing trench gate field-stop technology. It features a 1200 V collector-emitter voltage rating and a 15 A continuous collector current at 25°C. The device operates within a junction temperature range of -55°C to +175°C and is housed in a TO-247-3 through-hole package. Key electrical parameters include a maximum power dissipation of 259 W, a typical saturation voltage of 2.1 V at 15 A, and a gate charge of approximately 80 nC. Switching characteristics include turn-on and turn-off delays of 31 ns and 147 ns respectively under standard test conditions.
Verify component authenticity through authorized channels due to potential counterfeit risks. Confirm RoHS compliance status as required by specific project regulations. Ensure proper handling procedures are followed during storage and assembly to prevent electrostatic discharge damage to the semiconductor junction.
Select this component when a balance between conduction losses and switching speed is required for 1200 V applications. Consider the TO-247-3 package for thermal management needs and verify that the 15 A current rating aligns with the system's peak load requirements without exceeding the short-circuit withstand limits.
This part belongs to the S-series IGBT family, designed for general-purpose high-voltage switching. It shares the trench gate field-stop architecture with other STMicroelectronics devices but offers specific current and voltage ratings tailored for medium-power industrial applications.
Direct substitutes may include STGW15H120DF2 or STGW15M120DF3, provided pin compatibility and electrical specifications match the original design requirements.