STGW15S120DF3

STGW15S120DF3

$2.98
  • Description:IGBT TRENCH FS 1200V 30A TO-247
  • Series:-

SKU:b94302bba039 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT TRENCH FS 1200V 30A TO-247
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tube
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):30 A
  • Current - Collector Pulsed (Icm):60 A
  • Vce(on) (Max) @ Vge, Ic:2.05V @ 15V, 15A
  • Power - Max:259 W
  • Switching Energy:540µJ (on), 1.38mJ (off)
  • Input Type:Standard
  • Gate Charge:53 nC
  • Td (on/off) @ 25°C:23ns/140ns
  • Test Condition:600V, 15A, 22Ohm, 15V
  • Reverse Recovery Time (trr):270 ns
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247-3
  • Grade:-
  • Qualification:-

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STGW15S120DF3

Overview

The STGW15S120DF3 is a single IGBT from STMicroelectronics utilizing trench gate field-stop technology. It features a 1200 V collector-emitter voltage rating and a 15 A continuous collector current at 25°C. The device operates within a junction temperature range of -55°C to +175°C and is housed in a TO-247-3 through-hole package. Key electrical parameters include a maximum power dissipation of 259 W, a typical saturation voltage of 2.1 V at 15 A, and a gate charge of approximately 80 nC. Switching characteristics include turn-on and turn-off delays of 31 ns and 147 ns respectively under standard test conditions.

Feature Summary

  • Trench gate field-stop structure for optimized switching performance
  • Positive VCE(sat) temperature coefficient for safe paralleling
  • Integrated fast-recovery antiparallel diode

Applications

  • High-frequency inverters
  • Motor drives
  • Switched-mode power supplies

Procurement Notes

Verify component authenticity through authorized channels due to potential counterfeit risks. Confirm RoHS compliance status as required by specific project regulations. Ensure proper handling procedures are followed during storage and assembly to prevent electrostatic discharge damage to the semiconductor junction.

Selection Notes

Select this component when a balance between conduction losses and switching speed is required for 1200 V applications. Consider the TO-247-3 package for thermal management needs and verify that the 15 A current rating aligns with the system's peak load requirements without exceeding the short-circuit withstand limits.

Part Context

This part belongs to the S-series IGBT family, designed for general-purpose high-voltage switching. It shares the trench gate field-stop architecture with other STMicroelectronics devices but offers specific current and voltage ratings tailored for medium-power industrial applications.

Replacement Considerations

Direct substitutes may include STGW15H120DF2 or STGW15M120DF3, provided pin compatibility and electrical specifications match the original design requirements.

STGW15S120DF3STGW15S120DF3
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