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The STGW20H60DF is a single IGBT from the H series, utilizing an advanced proprietary trench gate field-stop structure. It features a collector-emitter maximum voltage (VCEO) of 600 V and a continuous collector current (Ic) of 20 A at 25 °C. The device has a collector-emitter saturation voltage of 1.8 V and operates within a junction temperature range up to 175 °C. It is housed in a TO-3P package with through-hole mounting.
This component belongs to the STMicroelectronics H series of IGBTs. This series is designed to provide an optimum compromise between conduction and switching losses. The tight parameter distribution ensures reliable performance in demanding power electronics environments.
Verify pinout compatibility and thermal resistance requirements when substituting. Check datasheet specifications for VCEO, Ic, and VCE(sat) to ensure equivalent electrical performance in the target circuit design.