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The STGW25H120DF2 is a single IGBT from the H series, utilizing trench gate field-stop technology. It features a 1200 V collector-emitter voltage (VCEO) and a continuous collector current (Ic) of 25 A at 25°C, with a pulsed current capability of 50 A. The typical saturation voltage (VCE(sat)) is 2.1 V at Ic = 25 A. Power dissipation reaches 375 W in a TO-247-3 through-hole package. Operating temperature spans -55°C to +175°C, with a minimum short-circuit withstand time of 5 μs at TJ = 150°C.
Verify component authenticity by cross-referencing the manufacturer's part number and date codes against official STMicroelectronics documentation. Confirm RoHS compliance status via the specific datasheet revision. Ensure the TO-247-3 package variant matches the design requirements before finalizing procurement orders.
Select this component when balancing conduction and switching losses is critical for efficiency. The H series offers a compromise suitable for high-frequency operation. Verify that the 5 μs short-circuit rating meets the protection circuit capabilities of the target application design.
This device belongs to the STGW25H120 family, specifically the DF2 suffix indicating the inclusion of an antiparallel diode in the TO-247-3 package. It complements the F2 version which lacks the diode, providing a complete half-bridge solution in a single component form factor for space-constrained designs.
STGW25H120F2 serves as a related alternative if the antiparallel diode is not required. For higher short-circuit ratings, consider the M series such as STGWA25M120DF3.