STGW25S120DF3

$8.36

Description：IGBT TRENCH FS 1200V 50A TO-247
Series：-

SKU:4adae22ac654 Category: Single IGBTs Brand: STMicroelectronics

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 1200V 50A TO-247
Series：-
Mfr：STMicroelectronics
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：50 A
Current - Collector Pulsed (Icm)：100 A
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 25A
Power - Max：375 W
Switching Energy：830µJ (on), 2.37mJ (off)
Input Type：Standard
Gate Charge：80 nC
Td (on/off) @ 25°C：31ns/147ns
Test Condition：600V, 25A, 15Ohm, 15V
Reverse Recovery Time (trr)：265 ns
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247-3
Grade：-
Qualification：-

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STGW25S120DF3

Overview

The STGW25S120DF3 is a single IGBT from STMicroelectronics utilizing trench gate field-stop technology. It features a 1200 V collector-emitter breakdown voltage and a 50 A continuous collector current at 25°C. The device operates within a junction temperature range of -55°C to +175°C, with a maximum power dissipation of 375 W in a TO-247-3 through-hole package. Key electrical parameters include a typical saturation voltage of 1.6 V, a gate-emitter leakage current of 250 nA, and a gate charge of 80 nC. Switching characteristics show turn-on and turn-off times of 31 ns and 147 ns respectively under test conditions of 600 V, 25 A, and 15 Ω. The antiparallel diode exhibits a reverse recovery time of 265 ns.

Feature Summary

Trench gate field-stop structure for optimized performance
Positive VCE(sat) temperature coefficient for safe paralleling
Soft and fast-recovery antiparallel diode

Applications

Industrial motor drives
Inverter systems
Switched-mode power supplies

Procurement Notes

Verify component authenticity due to end-of-life status. Confirm datasheet revisions match design requirements. Check RoHS compliance documentation. Validate packaging integrity upon receipt. Ensure storage conditions meet semiconductor standards.

Selection Notes

Consider the 1.6 V saturation voltage for conduction loss calculations. Evaluate thermal resistance for heat sink sizing. Assess switching speeds against EMI constraints. Verify short-circuit withstand capability if required by application topology.

Part Context

This component belongs to the S series of IGBTs, designed for high-speed applications. It shares the TO-247-3 package form factor with other STMicroelectronics power devices but differs in internal cell architecture and switching characteristics compared to H or M series variants.