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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 30A TO-247
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：30 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 30A
- Power - Max：260 W
- Switching Energy：151µJ (on), 293µJ (off)
- Input Type：Standard
- Gate Charge：149 nC
- Td (on/off) @ 25°C：37ns/146ns
- Test Condition：400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247
- Grade：-
- Qualification：-
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Overview
The STGW30H65FB is a trench gate field-stop IGBT from the HB series, rated at 650 V collector-emitter voltage and 30 A continuous collector current. It utilizes an advanced proprietary structure to optimize conduction and switching losses. Key electrical parameters include a maximum junction temperature of 175 °C, a typical saturation voltage of 1.65 V at 30 A, and a maximum gate-emitter voltage of ±20 V. The device operates within a temperature range of -55 °C to 175 °C and features minimized tail current for high-speed applications.
Feature Summary
- Advanced trench gate field-stop structure for optimized efficiency
- Slightly positive VCE(sat) temperature coefficient for safe paralleling
- Minimized tail current for reduced switching energy
Applications
- Frequency converters
- High-efficiency motor drives
- Industrial power supplies
Procurement Notes
Verify component authenticity by checking the manufacturer's marking code against official datasheets. Confirm package type matches TO-247 long leads. Ensure RoHS compliance status aligns with project requirements. Validate that the specific suffix corresponds to the intended electrical characteristics before integration into production designs.
Selection Notes
Select this component when designing circuits requiring a balance between low conduction loss and fast switching speed. The tight parameter distribution supports reliable parallel operation in higher current configurations. Consider thermal resistance limits and ensure adequate heatsinking to maintain junction temperatures below the 175 °C maximum during peak load conditions.
Part Context
This part belongs to the HB series of IGBTs developed by STMicroelectronics. The series represents an evolution of trench gate field-stop technology, focusing on minimizing both conduction and switching losses. It serves as a core switching element in medium-power industrial applications where efficiency and reliability are critical design constraints.
Replacement Considerations
Direct substitutes within the same family include STGWA30HP65FB2 and STGW40H65FB, though current ratings differ. Verify pinout compatibility and thermal characteristics before substitution. Cross-referencing with other manufacturers' 650V/30A TO-247 IGBTs requires careful evaluation of switching times and saturation voltages.
