STGW30NC60VD

$4.65

Description：IGBT 600V 80A TO-247-3
Series：PowerMESH™

SKU:24243639b6ac Category: Single IGBTs Brand: STMicroelectronics

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 80A TO-247-3
Series：PowerMESH™
Mfr：STMicroelectronics
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：80 A
Current - Collector Pulsed (Icm)：150 A
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 20A
Power - Max：250 W
Switching Energy：220µJ (on), 330µJ (off)
Input Type：Standard
Gate Charge：100 nC
Td (on/off) @ 25°C：31ns/100ns
Test Condition：390V, 20A, 3.3Ohm, 15V
Reverse Recovery Time (trr)：44 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247-3
Grade：-
Qualification：-

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STGW30NC60VD

Overview

The STGW30NC60VD is a 40 A, 600 V ultra-fast IGBT featuring an integrated ultra-fast recovery antiparallel diode. Manufactured using the PowerMESH process, it provides a balance between switching performance and low on-state behavior. The device operates within a junction temperature range of -55 °C to +150 °C and supports high-frequency operation up to 50 kHz.

Feature Summary

Utilizes advanced PowerMESH technology for optimized trade-off between switching speed and conduction losses
Integrates a very soft ultra-fast recovery antiparallel diode to minimize reverse recovery effects
Designed for high current capability and efficient high-frequency operation

Applications

High-frequency power conversion circuits
Soft-switching applications requiring fast recovery characteristics
Industrial motor drives operating at elevated frequencies

Procurement Notes

Verify component authenticity through authorized channels as this part number is listed as obsolete. Confirm final availability with suppliers, as stock levels may be limited or restricted to surplus markets. Ensure documentation matches the specific manufacturing lot requirements for legacy integration.

Selection Notes

Select this component when designing circuits requiring a 600 V rating with 40 A continuous current capability. The integrated ultra-fast diode makes it suitable for topologies where reverse recovery charge management is critical. Verify thermal management strategies to maintain junction temperatures within the specified operational limits during high-frequency switching cycles.

Part Context

This device belongs to the STGW series of PowerMESH IGBTs from STMicroelectronics. It shares architectural similarities with models like the STGW39NC60VD but offers distinct current ratings. The suffix 'VD' indicates the inclusion of the ultra-fast diode variant within the 600 V family lineup.