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The STGW30V60DF is a single IGBT from the V series, utilizing trench gate field-stop technology. It features a collector-emitter voltage of 600 V and a continuous collector current of 60 A at 25 °C case temperature. The device operates within a junction temperature range of -55 °C to 175 °C with a maximum power dissipation of 258 W. Typical saturation voltage is 1.85 V at 30 A. Switching characteristics include a turn-on delay of 45 ns and a turn-off delay of 189 ns at 25 °C. The integrated antiparallel diode exhibits a reverse recovery time of 53 ns.
Verify the specific ordering code against the required package type before procurement. The STGW30V60DF designation corresponds specifically to the TO-247 tube packaging variant. Confirm that the D²PAK tape and reel version (STGB30V60DF) is not required for the assembly process. Ensure the component meets the necessary environmental compliance standards defined by the manufacturer's ECOPACK specifications.
Select this component for applications requiring very high frequency conversion efficiency. The positive temperature coefficient of the saturation voltage facilitates reliable parallel operation without additional balancing components. Consider the thermal resistance values when designing heat sinks for high ambient temperatures or continuous duty cycles. Verify that the gate drive circuitry can support the specified total gate charge requirements.
This part belongs to the STMicroelectronics V series of trench gate field-stop IGBTs. It shares identical electrical ratings and performance characteristics with the STGB30V60DF, differing only in the physical package configuration and shipping method. The series is engineered to maximize converter efficiency through an optimal balance of low conduction and switching losses.
The STGB30V60DF serves as a functional equivalent with identical electrical parameters, differing only in the D²PAK package format. No other direct substitutes are documented in the official datasheet.