STGW35HF60WDI

Overview

The STGW35HF60WDI is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. It features an integrated ultra-fast recovery antiparallel diode and is housed in a TO-247 package with three terminals. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 35 A, with a peak pulsed current rating of 70 A. It operates within a junction temperature range of -55 °C to +150 °C and complies with RoHS standards.

Feature Summary

• Ultra-fast switching performance utilizing advanced trench gate field-stop technology
• Integrated ultra-fast soft recovery antiparallel diode for efficient commutation
• Positive VCE(sat) temperature coefficient enabling safe parallel operation

Applications

• High-frequency motor drives and inverters
• Switched-mode power supplies (SMPS)
• Induction heating systems

Procurement Notes

Verify the specific ordering suffix against official STMicroelectronics documentation to confirm pinout configuration and packaging details. Ensure compliance with relevant environmental directives such as RoHS before integration into final designs.

Selection Notes

Select this component for applications requiring high-speed switching and robust thermal performance. Consider the 600V rating and 35A continuous current limits when designing circuits to ensure adequate safety margins under varying load conditions.

Part Context

This IGBT belongs to the HF series from STMicroelectronics, designed for high-frequency converters. It utilizes trench gate field-stop technology to optimize the balance between conduction losses and switching speed, targeting efficiency improvements in power electronics.

Replacement Considerations

Direct replacements include STGP35HF60W, though it uses a different TO-220 package. Verify mechanical fit and thermal interface requirements when substituting components with differing form factors.