STGW39NC60VD

$5.49

Description：IGBT 600V 80A TO-247-3
Series：PowerMESH™

SKU:5bb18e9ef0ff Category: Single IGBTs Brand: STMicroelectronics

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 80A TO-247-3
Series：PowerMESH™
Mfr：STMicroelectronics
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：80 A
Current - Collector Pulsed (Icm)：220 A
Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 30A
Power - Max：250 W
Switching Energy：333µJ (on), 537µJ (off)
Input Type：Standard
Gate Charge：126 nC
Td (on/off) @ 25°C：33ns/178ns
Test Condition：390V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr)：45 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247-3
Grade：-
Qualification：-

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STGW39NC60VD

Overview

The STGW39NC60VD is a 600 V, 40 A N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. It utilizes the PowerMESH™ process to balance switching performance and low on-state behavior. The device features an ultra-fast free-wheeling diode co-packaged with the IGBT. Key electrical parameters include a collector-emitter saturation voltage of 1.8 V at 25 °C, a maximum power dissipation of 250 W, and a continuous collector current of 80 A. It operates within a junction temperature range of -55 °C to +150 °C and is housed in a TO-247-3 through-hole package.

Feature Summary

Utilizes advanced PowerMESH™ process for optimized trade-off between switching performance and low on-state voltage drop.
Co-packaged with an ultra-fast free-wheeling diode featuring very soft recovery characteristics.
Low C_RES / C_IES ratio eliminates susceptibility to cross-conduction.

Applications

High-frequency operation up to 50 kHz
Induction heating systems
Motor control applications

Procurement Notes

Verify the specific ordering suffix and revision level against the manufacturer's official datasheet before procurement. Confirm that the component meets RoHS compliance standards required for the target assembly. Ensure the TO-247-3 through-hole package dimensions align with the printed circuit board layout specifications. Cross-reference the active status and lead times directly with authorized distribution channels.

Selection Notes

Select this component for designs requiring high current capability and fast switching speeds. The integrated ultra-fast diode simplifies circuit topology by removing the need for external anti-parallel diodes. Consider the 1.8 V saturation voltage for thermal management calculations. Verify that the 10 μs short-circuit withstand time matches the protection scheme of the driving gate circuitry.

Part Context

This part belongs to the STGW series of discrete IGBTs from STMicroelectronics. It shares the PowerMESH™ technology platform with related models such as the STGW30NC60WD and STGW20NC60VD. The series is characterized by trench-gate field-stop technology designed for efficient power conversion in industrial and consumer electronics.

Replacement Considerations

Potential substitutes include the STGW30NC60WD and STGW20NC60VD from the same manufacturer family. Verify pinout compatibility and ensure the replacement device meets or exceeds the 600 V breakdown voltage and 40 A current requirements of the original design.