STGW40H120DF2

$6.91

Description：IGBT TRENCH FS 1200V 80A TO-247
Series：-

SKU:7d65379f1c79 Category: Single IGBTs Brand: STMicroelectronics

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 1200V 80A TO-247
Series：-
Mfr：STMicroelectronics
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：80 A
Current - Collector Pulsed (Icm)：160 A
Vce(on) (Max) @ Vge, Ic：2.6V @ 15V, 40A
Power - Max：468 W
Switching Energy：1mJ (on), 1.32mJ (off)
Input Type：Standard
Gate Charge：187 nC
Td (on/off) @ 25°C：18ns/152ns
Test Condition：600V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr)：488 ns
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247-3
Grade：-
Qualification：-

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STGW40H120DF2

Overview

The STGW40H120DF2 is a trench gate field-stop IGBT from the H series, rated at 1200 V collector-emitter voltage and 40 A continuous collector current. It features a typical saturation voltage of 2.1 V at 40 A and supports a maximum junction temperature of 175 °C. The device offers a minimum short-circuit withstand time of 5 μs at 150 °C and utilizes a TO-247-3 through-hole package with a power dissipation rating of 259 W.

Feature Summary

Advanced trench gate field-stop structure for optimized switching performance
Minimized tail current to reduce switching losses
Positive VCE(sat) temperature coefficient enabling safe paralleling

Applications

High-frequency converters
Uninterruptible power supplies (UPS)
Welding machines
Photovoltaic inverters
Power factor correction circuits

Procurement Notes

Verify the specific suffix DF2 against official datasheets to confirm the antiparallel diode characteristics and thermal resistance values. Ensure the component meets RoHS compliance requirements if applicable to your manufacturing standards. Cross-reference the manufacturer part number with authorized distributors to avoid counterfeit components.

Selection Notes

Select this component when high switching frequency efficiency is required alongside robust short-circuit protection. The H series design balances conduction and switching losses effectively. Consider the TO-247-3 package constraints for thermal management in your specific application layout.

Part Context

This device belongs to the STMicroelectronics H series of trench gate field-stop IGBTs. The series is engineered for applications demanding high switching speeds and low energy loss. The part integrates a fast-recovery antiparallel diode suitable for hard-switching topologies.