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The STGW40NC60WD is a single N-channel IGBT from the PowerMESH family, designed for high-frequency power switching applications. It features a collector-emitter breakdown voltage (V_CES) of 600 V and a continuous collector current (I_C) of 40 A at 100°C. The device utilizes an ultra-fast recovery antiparallel diode with a reverse recovery time (t_rr) of approximately 40 ns. Key electrical parameters include a maximum on-state saturation voltage (V_CE(sat)) of less than 2.5 V at 25°C and an input capacitance (C_ies) of 2080 pF. The component operates within a junction temperature range of -55°C to +150°C and is housed in a TO-247-3 through-hole package.
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout compatibility and thermal specifications. Ensure the procurement source provides valid traceability documentation. Confirm RoHS compliance status as per the latest regulatory updates before finalizing orders.
Select this component for designs requiring 600 V blocking capability with moderate current handling up to 40 A. The TO-247-3 package is suitable for board-level mounting where robust mechanical stability is required. Evaluate thermal management requirements based on the specified power dissipation limits under expected operating conditions.
This device belongs to the STMicroelectronics PowerMESH IGBT series, which employs a patented strip layout for high-voltage applications. The STGW40NC60WD represents a generation of components focused on improving the figure of merit between Ron*area and switching speed compared to earlier mesh overlay technologies.
Potential substitutes include the STGW35NC60WD and STGW45NC60WD, which share similar voltage ratings and package types but differ in current capacity. Verify thermal resistance and gate charge parameters when transitioning between these variants to ensure circuit stability.