STGW40S120DF3

$5.00

Description：IGBT TRENCH FS 1200V 80A TO-247
Series：-

SKU:56557caf2bee Category: Single IGBTs Brand: STMicroelectronics

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 1200V 80A TO-247
Series：-
Mfr：STMicroelectronics
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：80 A
Current - Collector Pulsed (Icm)：160 A
Vce(on) (Max) @ Vge, Ic：2.15V @ 15V, 40A
Power - Max：468 W
Switching Energy：1.43mJ (on), 3.83mJ (off)
Input Type：Standard
Gate Charge：129 nC
Td (on/off) @ 25°C：35ns/148ns
Test Condition：600V, 40A, 15Ohm, 15V
Reverse Recovery Time (trr)：355 ns
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247-3
Grade：-
Qualification：-

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STGW40S120DF3

Overview

The STGW40S120DF3 is a single IGBT from the S series, utilizing trench gate field-stop technology. It features a 1200 V collector-emitter breakdown voltage and a continuous collector current of 40 A at 25°C. The device operates within a junction temperature range of -55°C to 175°C. Key electrical parameters include a maximum on-state voltage of 1.65 V at 40 A and a typical value of 1.85 V. It offers a short-circuit withstand time of 10 μs and a maximum power dissipation of 468 W in a TO-247-3 package.

Feature Summary

Advanced trench gate field-stop structure for optimized performance
Positive VCE(sat) temperature coefficient for safer paralleling
Soft and very fast-recovery antiparallel diode
Low thermal resistance design

Applications

Inverter systems requiring low-loss operation
Applications demanding short-circuit functionality
Power control circuits with high efficiency requirements

Procurement Notes

Verify component authenticity through authorized channels due to potential counterfeit risks. Confirm that the specific suffix matches the required S series specifications. Check for RoHS compliance status if environmental regulations apply. Ensure the TO-247-3 package dimensions align with existing PCB layouts. Validate datasheet revisions against manufacturing dates.

Selection Notes

Choose this component when balancing inverter system performance with efficiency is critical. The tight parameter distribution supports reliable parallel operation. Consider the 10 μs short-circuit withstand time for robust fault protection. Evaluate the soft recovery diode characteristics for high-frequency switching applications. Assess thermal management needs based on the 468 W power rating.

Part Context

This part belongs to the STMicroelectronics M and S series IGBT lineup, designed for medium-power applications. It complements other devices like the STGW40M120DF3 by offering specific low-drop characteristics. The S series focuses on low loss and safe paralleling, distinguishing it from general-purpose variants. It serves as a discrete solution for power conversion stages.