STGW40V60F

Overview

The STGW40V60F is a single N-channel IGBT from the V series, utilizing trench gate field-stop technology. It features a collector-emitter voltage (VCEO) of 600 V and a continuous collector current (Ic) of 40 A at 25°C. The device exhibits a typical collector-emitter saturation voltage (VCE(sat)) of 1.8 V at 40 A. Power dissipation (Pd) is rated at 283 W in a TO-247 package. Operating temperatures range from -55°C to +175°C junction temperature.

Feature Summary

• Trench gate field-stop structure for optimized switching and conduction performance
• Tail-less switching off characteristics for high-frequency operation
• Positive VCE(sat) temperature coefficient enabling safe paralleling
• Very fast soft recovery antiparallel diode integrated

Applications

• Very high frequency converters
• Motor drives
• Power supplies

Procurement Notes

Verify component authenticity through authorized channels. Confirm datasheet revisions match design requirements. Ensure thermal management aligns with specified power dissipation limits. Check for RoHS compliance status if required by target market regulations.

Selection Notes

Select based on 600 V blocking capability and 40 A current rating. Consider TO-247 package for through-hole mounting. Evaluate thermal resistance against system heat sink capabilities. Verify compatibility with drive circuits due to switching speed characteristics.

Part Context

Part of STMicroelectronics' V series IGBT lineup. Designed for efficiency in high-frequency applications. Competes with other 600 V trench-gate IGBTs offering similar current ratings and low saturation voltages.

Replacement Considerations

STGB40V60F offers identical electrical specifications but uses a D2PAK surface-mount package instead of TO-247. STGW40V60DF provides similar performance in a different variant configuration.