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Product Detailed Parameters
- Description：IGBT 600V 70A TO-247-3
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：70 A
- Current - Collector Pulsed (Icm)：150 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 30A
- Power - Max：250 W
- Switching Energy：300µJ (on), 330µJ (off)
- Input Type：Standard
- Gate Charge：160 nC
- Td (on/off) @ 25°C：30ns/145ns
- Test Condition：400V, 30A, 6.8Ohm, 15V
- Reverse Recovery Time (trr)：55 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The STGW45HF60WD is a 600 V N-channel IGBT from STMicroelectronics, housed in a TO-247 package. It features a maximum continuous collector current of 70 A and a maximum power dissipation of 250 W at 25 °C. The device operates within a junction temperature range of -55 °C to +150 °C, with a maximum gate-emitter voltage of ±20 V. Key electrical parameters include an input capacitance of 2900 pF and a rated energy of 1100 µJ.
Feature Summary
- Utilizes advanced trench gate field-stop structure for optimized switching performance
- Designed as part of the HB series for high-speed frequency converter applications
- Features minimized tail current and low saturation voltage for efficiency
Applications
- High-speed frequency converters
- Motor control drives
- Induction heating systems
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout configuration and thermal characteristics. Ensure the component meets RoHS compliance requirements for your target market. Cross-reference the part number with authorized distributors to confirm current production status and availability before finalizing procurement plans.
Selection Notes
Select this component for designs requiring high-speed switching capabilities combined with robust conduction performance. The HB series architecture provides a balanced compromise between conduction and switching losses. Consider the positive VCE(sat) temperature coefficient when designing circuits that require safe paralleling operations for higher current handling.
Part Context
This IGBT belongs to STMicroelectronics' HB series, which utilizes proprietary trench gate field-stop technology. This family is engineered to maximize efficiency in frequency converters by minimizing both conduction and switching losses. The design supports high-frequency operation while maintaining reliable performance under varying thermal conditions.
Replacement Considerations
Direct substitutes may include other 600 V, 70 A IGBTs from the same manufacturer series. Verify compatibility regarding package dimensions, thermal resistance, and electrical parameters such as VCE(sat) and switching times before implementing any alternative components.
