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Product Detailed Parameters
- Description：IGBT 600V 100A TO247
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：100 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：2.6V @ 15V, 40A
- Power - Max：285 W
- Switching Energy：365µJ (on), 560µJ (off)
- Input Type：Standard
- Gate Charge：195 nC
- Td (on/off) @ 25°C：52ns/240ns
- Test Condition：390V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247 Long Leads
- Grade：-
- Qualification：-
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Overview
The STGW50NC60W is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. It features a collector-emitter voltage rating of 600 V and a maximum continuous collector current of 100 A. The device utilizes the Power MESH™ process to optimize switching performance and on-state behavior. It operates within a junction temperature range of -55 °C to 150 °C and has a gate-emitter voltage limit of ±20 V. The component is housed in a TO-247 package with three terminals.
Feature Summary
- Utilizes advanced Power MESH™ technology for optimized trade-off between switching speed and low on-state voltage drop
- Designed for high frequency operation up to 50 kHz
- Features very soft ultra-fast recovery antiparallel diode characteristics
Applications
- High frequency motor controls
- Switching mode power supplies (SMPS)
- Power factor correction (PFC) circuits
Procurement Notes
Verify the specific datasheet revision and manufacturing status before procurement, as component availability and specifications may vary across different production batches. Confirm that the TO-247 package dimensions match the target PCB footprint requirements. Ensure compliance with relevant environmental standards such as RoHS if required by the final equipment design.
Selection Notes
Select this component when a 600 V blocking capability and high current handling are required in a through-hole package. Consider the thermal resistance values provided in the official documentation to determine appropriate heatsinking solutions. Evaluate the switching losses against the application's frequency requirements to ensure efficient operation within the specified temperature limits.
Part Context
This IGBT belongs to the STGW series, which focuses on high-performance switching applications. It shares the Power MESH™ technology foundation with other models in the family but offers distinct current and voltage ratings tailored for medium-to-high power industrial and consumer electronics systems requiring robust switching capabilities.
Replacement Considerations
Direct replacements must maintain the 600 V / 100 A rating and TO-247-3 package. Verify pinout compatibility and thermal characteristics. Cross-reference with similar STMicroelectronics IGBTs or competitors offering equivalent Power MESH™ technology for potential drop-in substitutions.
