STGW60H65DF

Overview

The STGW60H65DFB is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the HB series, manufactured by STMicroelectronics. It utilizes an advanced trench gate field-stop structure to optimize efficiency in frequency converters. The device features a collector-emitter maximum voltage of 650 V and supports continuous collector currents up to 80 A at 25°C, with a rated current of 60 A. Key electrical parameters include a typical saturation voltage of 1.6 V at 60 A and a maximum power dissipation of 375 W. It operates within a temperature range of -55°C to +175°C and is housed in a TO-247-3 through-hole package.

Feature Summary

• Advanced trench gate field-stop structure for optimized switching performance
• Positive VCE(sat) temperature coefficient enabling safer paralleling operation
• Very fast soft recovery antiparallel diode integrated with the IGBT

Applications

• High-efficiency frequency converters
• Motor control applications
• Industrial power supplies

Procurement Notes

Verify the exact part number suffix during procurement, as the provided model lacks the final character found in official documentation. Confirm RoHS compliance status and specific packaging quantities directly with the manufacturer or authorized distributors. Ensure the component matches the required thermal and electrical specifications for the intended circuit design before ordering.

Selection Notes

Select this component for designs requiring high-speed switching and low conduction losses in medium-power applications. Consider the 650V rating and 60A continuous current capability when sizing heat sinks. Verify that the drive circuit can handle the specified gate-emitter voltage limits and switching characteristics to ensure reliable operation within the 175°C junction temperature limit.

Part Context

This IGBT belongs to the HB series, which represents a balance between conduction and switching losses. The device is designed to maximize efficiency in frequency converters. It is distinct from other ST IGBTs by its specific trench gate field-stop technology and tight parameter distribution, which facilitates parallel operation in higher power configurations.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Engineers should consult STMicroelectronics technical support or authorized distributor databases for verified cross-references based on specific electrical and mechanical requirements.