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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 120A TO-247
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：120 A
- Current - Collector Pulsed (Icm)：240 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 60A
- Power - Max：360 W
- Switching Energy：750µJ (on), 1.05mJ (off)
- Input Type：Standard
- Gate Charge：217 nC
- Td (on/off) @ 25°C：65ns/180ns
- Test Condition：400V, 60A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The STGW60H65F is a field stop trench gate IGBT rated for 650 V collector-emitter voltage and 60 A continuous collector current at 100 °C case temperature. It features a maximum total dissipation of 360 W at 25 °C, a junction-to-case thermal resistance of 0.35 °C/W, and a short-circuit withstand time of 6 µs. The device operates within a junction temperature range up to 150 °C and utilizes a TO-247 tube package.
Feature Summary
- High speed switching capability
- Tight parameter distribution for safe paralleling
- Low thermal resistance
- 6 µs short-circuit withstand time
Applications
- Photovoltaic inverters
- Uninterruptible power supply
- Welding
- Power factor correction
- High switching frequency converters
Procurement Notes
Verify the specific ordering code against the manufacturer's official documentation to ensure correct component selection. Confirm that the required packaging format matches the specified tube configuration. Ensure all electrical ratings align with the intended circuit design parameters before finalizing procurement orders.
Selection Notes
Select this component for applications requiring optimized efficiency in high switching frequency converters. Consider the slightly positive VCE(sat) temperature coefficient when designing circuits that require safer paralleling operation. Evaluate the thermal management requirements based on the specified junction-to-case thermal resistance values.
Part Context
This device belongs to the field stop trench gate IGBT category developed using advanced proprietary structures. It represents an optimized compromise between conduction and switching losses. The technology aims to maximize efficiency specifically for high switching frequency converter applications.
Replacement Considerations
Consult official manufacturer substitution lists for verified alternatives. Do not assume functional equivalence with other models without verifying datasheet specifications.
FAQ
What is the short-circuit withstand time?
The short-circuit withstand time is 6 µs at VCC = 400 V and VGE = 15 V.
What is the typical collector-emitter saturation voltage?
The typical VCE(sat) is 1.9 V at VGE = 15 V and IC = 60 A.
What is the maximum operating junction temperature?
The maximum operating junction temperature is 150 °C.
