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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 120A TO-247
- Series：-
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：120 A
- Current - Collector Pulsed (Icm)：240 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 80A
- Power - Max：469 W
- Switching Energy：2.1mJ (on), 1.5mJ (off)
- Input Type：Standard
- Gate Charge：414 nC
- Td (on/off) @ 25°C：84ns/280ns
- Test Condition：400V, 80A, 10Ohm, 15V
- Reverse Recovery Time (trr)：85 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-4
- Supplier Device Package：TO-247-4
- Grade：-
- Qualification：-
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Overview
The STGW80H65DFB-4 is a trench gate field-stop IGBT from the HB series, rated at 650 V collector-emitter voltage and 80 A continuous collector current. It features a typical saturation voltage of 1.6 V at 80 A and supports a maximum junction temperature of 175 °C. The device utilizes a TO-247 package with through-hole mounting for efficient thermal management. Key electrical characteristics include a maximum power dissipation of 470 W and a maximum gate-emitter voltage of ±20 V.
Feature Summary
- Advanced trench gate field-stop structure optimizes the balance between conduction and switching losses.
- Kelvin emitter pin separates the power path from the driving signal to enable faster switching events.
- Slightly positive VCE(sat) temperature coefficient ensures safer parallel operation due to tight parameter distribution.
Applications
- High-efficiency frequency converters
- Industrial motor drives
- Uninterruptible power supplies (UPS)
Procurement Notes
Verify the specific suffix -4 against official datasheets to confirm pinout and electrical tolerances. Ensure the procurement channel provides traceable documentation matching the manufacturer's specifications. Confirm that the component meets RoHS compliance standards as indicated in the product description.
Selection Notes
Select this component when high-speed switching and low conduction loss are critical for system efficiency. The Kelvin pin requires appropriate driver design to fully utilize its switching performance benefits. Consider the 175 °C junction temperature rating for high-temperature operational environments.
Part Context
This part belongs to STMicroelectronics' HB series of high-speed IGBTs. It shares the trench gate field-stop technology with other members like the STGWA80H65DFB but offers specific packaging and electrical configurations tailored for general-purpose high-power applications.
Replacement Considerations
Direct substitutes within the same series include the STGWA80H65DFB. Verify pin compatibility and thermal resistance values before substitution. Other variants may require adjustments to gate drive circuits due to differences in switching speed characteristics.
