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The STGW80V60DF is an N-channel Insulated Gate Bipolar Transistor (IGBT) from STMicroelectronics, utilizing Trench Gate Field Stop technology. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 120 A. The device operates with a maximum power dissipation of 469 W and a typical saturation voltage of 2.3 V. Designed for high-frequency applications up to 1 MHz, it supports a junction temperature range from -40°C to 175°C. The component is housed in a TO-247 package with three pins for through-hole mounting.
Verify the specific datasheet revision and ordering suffixes directly with STMicroelectronics or authorized distributors. Confirm that the TO-247 package dimensions and thermal characteristics match your design requirements. Ensure compliance with RoHS standards if applicable to your manufacturing process. Cross-reference part numbers carefully to avoid confusion with similar series components.
Select this IGBT when designing circuits requiring high current handling at 600 V with optimized switching speeds. Consider the positive temperature coefficient for parallel configurations to prevent thermal runaway. Evaluate the thermal resistance and heat sinking needs based on the 469 W power dissipation rating. Compare against other V series devices for specific current and voltage trade-offs.
This component belongs to the V series of IGBTs developed by STMicroelectronics. The series focuses on maximizing efficiency in very high frequency converters through advanced trench gate field-stop technology. It represents a specific optimization within the broader portfolio of high-speed switching devices designed for industrial and power electronics applications.
STGW60V60DF offers a lower current rating but shares the same voltage and package. STGW40V60DF provides further current reduction within the same series. Verify pinout compatibility and thermal performance before substituting any alternative models.