STGW80V60DF

STGW80V60DF

$5.05
  • Description:IGBT TRENCH FS 600V 120A TO-247
  • Series:-

SKU:4aaee56b0f54 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT TRENCH FS 600V 120A TO-247
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tube
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):120 A
  • Current - Collector Pulsed (Icm):240 A
  • Vce(on) (Max) @ Vge, Ic:2.3V @ 15V, 80A
  • Power - Max:469 W
  • Switching Energy:1.8mJ (on), 1mJ (off)
  • Input Type:Standard
  • Gate Charge:448 nC
  • Td (on/off) @ 25°C:60ns/220ns
  • Test Condition:400V, 80A, 5Ohm, 15V
  • Reverse Recovery Time (trr):60 ns
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3 Exposed Pad
  • Supplier Device Package:TO-247
  • Grade:-
  • Qualification:-

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STGW80V60DF

Overview

The STGW80V60DF is an N-channel Insulated Gate Bipolar Transistor (IGBT) from STMicroelectronics, utilizing Trench Gate Field Stop technology. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 120 A. The device operates with a maximum power dissipation of 469 W and a typical saturation voltage of 2.3 V. Designed for high-frequency applications up to 1 MHz, it supports a junction temperature range from -40°C to 175°C. The component is housed in a TO-247 package with three pins for through-hole mounting.

Feature Summary

  • Advanced proprietary trench gate field-stop structure optimizes the balance between conduction and switching losses.
  • Positive VCE(sat) temperature coefficient and tight parameter distribution ensure safer paralleling operation.
  • Very fast soft recovery antiparallel diode minimizes tail current for enhanced switching performance.

Applications

  • High-efficiency very high frequency converters
  • Industrial motor drives
  • Switching power supplies

Procurement Notes

Verify the specific datasheet revision and ordering suffixes directly with STMicroelectronics or authorized distributors. Confirm that the TO-247 package dimensions and thermal characteristics match your design requirements. Ensure compliance with RoHS standards if applicable to your manufacturing process. Cross-reference part numbers carefully to avoid confusion with similar series components.

Selection Notes

Select this IGBT when designing circuits requiring high current handling at 600 V with optimized switching speeds. Consider the positive temperature coefficient for parallel configurations to prevent thermal runaway. Evaluate the thermal resistance and heat sinking needs based on the 469 W power dissipation rating. Compare against other V series devices for specific current and voltage trade-offs.

Part Context

This component belongs to the V series of IGBTs developed by STMicroelectronics. The series focuses on maximizing efficiency in very high frequency converters through advanced trench gate field-stop technology. It represents a specific optimization within the broader portfolio of high-speed switching devices designed for industrial and power electronics applications.

Replacement Considerations

STGW60V60DF offers a lower current rating but shares the same voltage and package. STGW40V60DF provides further current reduction within the same series. Verify pinout compatibility and thermal performance before substituting any alternative models.

STGW80V60DFSTGW80V60DF
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