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The STGWA15M120DF3 is a trench gate field-stop IGBT from the M series, rated at 1200 V and 15 A. It features a maximum junction temperature of 175 °C and a short-circuit withstand time of 10 μs. The typical saturation voltage (VCE(sat)) is 1.85 V at IC = 15 A. Key characteristics include tight parameter distribution, a positive VCE(sat) temperature coefficient, low thermal resistance, and a soft- and fast-recovery antiparallel diode.
Verify the specific part number against official STMicroelectronics documentation to confirm current production status and availability. Ensure that any ordering suffixes match the required package or electrical specifications exactly as defined in the datasheet. Cross-reference with authorized distributors to validate authenticity and supply chain integrity before procurement.
Select this component for applications prioritizing low conduction losses and robust short-circuit capability within the M series family. The positive temperature coefficient facilitates safe parallel operation without active current sharing circuits. Verify that the 1200 V rating and 15 A continuous current meet the specific circuit requirements and thermal management constraints of the target design.
This device belongs to the STMicroelectronics M series of IGBTs, which are designed using advanced trench gate field-stop technology. The series targets applications where an optimal balance between system performance, efficiency, and reliability is critical. The M series emphasizes low loss and essential short-circuit functionality for modern power electronics.
Direct substitutes within the same M series family include STGWA25M120DF3 and STGWA40M120DF3, which share similar structural characteristics but differ in current ratings. Ensure compatibility with existing thermal and drive circuits when upgrading or downgrading current capacity.
The maximum junction temperature (TJ) is 175 °C.
Yes, it has a minimum short-circuit withstand time of 10 μs.
It features a soft- and fast-recovery antiparallel diode.