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Product Detailed Parameters
- Description：IGBT 600V 52A 208W TO247
- Series：PowerMESH™
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：52 A
- Current - Collector Pulsed (Icm)：60 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 12A
- Power - Max：208 W
- Switching Energy：85µJ (on), 189µJ (off)
- Input Type：Standard
- Gate Charge：53 nC
- Td (on/off) @ 25°C：25ns/97ns
- Test Condition：390V, 12A, 10Ohm, 15V
- Reverse Recovery Time (trr)：31 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247 Long Leads
- Grade：-
- Qualification：-
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Overview
The STGWA19NC60HD is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. It features an integrated ultra-fast recovery anti-parallel diode and utilizes the PowerMESH process technology. The device is rated for a collector-emitter voltage of 600 V and supports a continuous collector current of 31 A at case temperatures of 25 °C. It operates within a junction temperature range of -55 °C to +150 °C and is housed in a TO-247 package.
Feature Summary
- Advanced PowerMESH process technology ensuring excellent trade-off between switching performance and low on-state behavior
- Low on-voltage drop characteristics for improved efficiency
- Very soft UltraFAST recovery anti-parallel diode
Applications
- High frequency motor controls
- Switched-mode power supplies (SMPS)
- Power factor correction (PFC) circuits
Procurement Notes
Verify component authenticity through authorized STMicroelectronics distributors or direct channels. Confirm lot traceability and RoHS compliance status prior to integration. Ensure storage conditions adhere to semiconductor handling standards to prevent moisture sensitivity damage during assembly processes.
Selection Notes
Select this component for designs requiring high-frequency operation with minimal conduction losses. The 31 A rating suits moderate power applications where thermal management via the TO-247 package is feasible. Consider the soft-recovery diode特性 for resonant topologies to minimize reverse recovery losses.
Part Context
This part belongs to the STGW series of very fast IGBTs developed using advanced PowerMESH technology. It shares architectural similarities with other members like the STGP19NC60HD but offers higher current capacity suitable for more demanding power levels within the same voltage class.
Replacement Considerations
Direct substitutes include STGP19NC60HD and STGB19NC60HDT4, which share similar electrical ratings and packaging. Verify pinout compatibility and thermal resistance specifications before substitution to ensure circuit integrity.
