STGWA25H120DF2

Overview

The STGWA25H120DF2 is a trench gate field-stop IGBT from the H series, rated at 1200 V collector-emitter voltage and 25 A continuous collector current. It features a typical saturation voltage of 2.1 V at 25 A and supports a maximum power dissipation of 375 W in a TO-247 package. The device operates within a junction temperature range of -55 °C to +175 °C and provides a minimum short-circuit withstand time of 5 µs at 150 °C.

Feature Summary

• Advanced proprietary trench gate field-stop structure for optimized switching performance
• Slightly positive VCE(sat) temperature coefficient enabling safer paralleling operation
• Minimized tail current characteristics for high-speed switching applications
• Integrated very fast recovery antiparallel diode

Applications

• Uninterruptible power supply systems
• Welding machines
• Photovoltaic inverters
• Power factor correction circuits
• High frequency converters

Procurement Notes

Verify the specific suffix DF2 against official datasheets to confirm pinout and thermal pad configuration. Ensure compatibility with existing PCB footprints and heatsinking requirements before integration. Cross-reference part numbers with manufacturer updates to avoid obsolete variants.

Selection Notes

Select this component for designs requiring high switching frequencies where low conduction losses are critical. The tight parameter distribution facilitates parallel operation for higher current capacity. Evaluate thermal management strategies given the 375 W dissipation rating and 175 °C maximum junction temperature limit.

Part Context

This device belongs to the STMicroelectronics H series of IGBTs, which balances conduction and switching losses. It utilizes a trench gate field-stop technology to enhance efficiency in high-frequency converters compared to standard planar structures.

Replacement Considerations

STGWA25H120F2 is listed as a similar part number with identical functional descriptions.