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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 50A TO247
- Series：HB2
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：50 A
- Current - Collector Pulsed (Icm)：90 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 30A
- Power - Max：167 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：90 nC
- Td (on/off) @ 25°C：-/71ns
- Test Condition：400V, 30A, 6.8Ohm, 15V
- Reverse Recovery Time (trr)：140 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247 Long Leads
- Grade：-
- Qualification：-
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Overview
The STGWA30HP65FB2 is a high-speed N-channel IGBT from the HB2 series, utilizing an advanced trench gate field-stop structure. It features a 650 V collector-emitter voltage rating and a continuous collector current of 30 A at TC = 100 °C. The device operates with a maximum junction temperature of 175 °C and includes a co-packaged protection diode in antiparallel configuration. Key electrical parameters include a typical VCE(sat) of 1.65 V at IC = 30 A, a total gate charge of 90 nC, and a turn-off switching energy of 310 µJ under standard test conditions.
Feature Summary
- Advanced proprietary trench gate field-stop structure optimized for low conduction losses and reduced switching energy.
- Co-packaged protection diode integrated in antiparallel to maximize efficiency in fast applications.
- Positive VCE(sat) temperature coefficient ensuring safe parallel operation and minimized tail current.
Applications
- Welding equipment
- Power factor correction circuits
Procurement Notes
Verify component authenticity by cross-referencing the marking code G30HP65FB2 against official STMicroelectronics documentation. Confirm package type matches TO-247 long leads specifications. Ensure ordering suffixes align with specific environmental compliance grades such as ECOPACK2 before finalizing procurement orders.
Selection Notes
Select this component for designs requiring high-speed switching capabilities combined with robust thermal performance up to 175 °C. The tight parameter distribution supports precise control loop design. Evaluate thermal resistance values against system heat dissipation requirements to ensure reliable operation within the specified case temperature limits.
Part Context
This part belongs to the STGWA30HP65FB2 product line, representing an evolution of the HB2 series IGBTs. It succeeds previous generations by offering improved VCE(sat) behavior at low currents. The device is designed specifically for industrial applications demanding high efficiency and rapid switching speeds.
Replacement Considerations
STGW30V60F is identified as a discontinued alternative that may serve as a replacement option. Verify pinout compatibility and electrical ratings carefully when substituting components to ensure circuit functionality remains intact.
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature (TJ) is 175 °C.
Does the device include an integrated diode?
Yes, it features a co-packaged protection diode used for protection purposes only, connected in antiparallel with the IGBT.
What is the typical collector-emitter saturation voltage?
The typical VCE(sat) is 1.65 V when measured at a collector current (IC) of 30 A.
