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The STGWA30M65DF2 is a single N-channel IGBT from the M series, utilizing trench gate field-stop technology. It features a maximum collector-emitter voltage of 650 V and a continuous collector current of 60 A at 25°C. The typical saturation voltage is 1.55 V, with a power dissipation rating of 258 W. Operating within a junction temperature range of -55°C to +175°C, it is housed in a TO-247-3 through-hole package.
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout and electrical characteristics. Ensure compliance with RoHS directives and check for any recent Product Change Notices (PCN) that may affect material composition or manufacturing location before finalizing procurement orders.
Select this component for designs prioritizing low conduction losses and robust short-circuit withstand time. The tight parameter distribution supports reliable parallel operation in high-current applications. Verify thermal management requirements given the 258 W dissipation rating and ensure gate drive voltages remain within the specified limits.
This part belongs to the STMicroelectronics M series of IGBTs, which are engineered for medium-power applications. The 'W' suffix typically denotes the TO-247 package variant, distinguishing it from surface-mount options like the STGB series. It serves as a direct replacement for older generations in inverter topologies where efficiency and reliability are critical.
Direct replacements include the STGW30M65DF2, which shares identical electrical ratings and package type but may represent an earlier generation of the same product line. Verify pin compatibility and thermal resistance values when substituting.