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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 87A TO247
- Series：M
- Mfr：STMicroelectronics
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：87 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 30A
- Power - Max：441 W
- Switching Energy：756µJ (on), 1.057mJ (off)
- Input Type：Standard
- Gate Charge：81.6 nC
- Td (on/off) @ 25°C：21.6ns/138ns
- Test Condition：400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr)：151 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247 Long Leads
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The STGWA30M65DF2AG is an automotive-grade N-channel IGBT from the M series, utilizing a trench gate field-stop structure. It features a collector-emitter voltage of 650 V and a continuous collector current of 87 A at 25 °C case temperature. The device has a typical saturation voltage of 1.7 V at 30 A and supports a maximum junction temperature of 175 °C. It includes an integrated antiparallel diode with a forward current rating of 66 A. Thermal resistance from junction to case is 0.34 °C/W for the IGBT and 0.86 °C/W for the diode. The component is housed in a TO-247 long leads package.
Feature Summary
- AEC-Q101 qualified for automotive reliability
- 6 μs minimum short-circuit withstand time
- Soft and very fast-recovery antiparallel diode
- Tight parameter distribution for safer paralleling
Applications
- Motor control
- Auxiliary loads
- Thermal management
- General purpose inverter
Procurement Notes
Verify the specific ordering code against official documentation to ensure correct package and qualification grade. Confirm that the TO-247 long leads variant matches the target PCB footprint requirements. Check for RoHS compliance status as defined by the manufacturer's ECOPACK specifications before finalizing procurement orders.
Selection Notes
Select this component when high thermal stability and automotive certification are required. The positive VCE(sat) temperature coefficient facilitates safe parallel operation in high-current designs. Evaluate the switching energy values against the available gate drive resistance to optimize system efficiency and minimize electromagnetic interference during transitions.
Part Context
This part belongs to the STMicroelectronics M series of low-loss IGBTs. The series is designed to balance inverter system performance with efficiency. The device integrates advanced trench gate field-stop technology to reduce conduction losses while maintaining robust short-circuit capability suitable for demanding power electronics environments.
Replacement Considerations
STGWA30M65DF2 is the non-automotive equivalent within the same series. Verify pinout compatibility and thermal characteristics when substituting. Ensure the replacement meets the specific voltage and current ratings required by the application circuit without altering the board layout constraints.
