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The STGWA40H120DF2 is a trench gate field-stop IGBT from the H series, rated at 1200 V and 40 A. It features a typical saturation voltage of 2.1 V at 40 A and supports a maximum junction temperature of 175 °C. The device offers a minimum short-circuit withstand time of 5 μs at 150 °C. Key electrical characteristics include minimized tail current and very fast recovery antiparallel diode performance.
Verify the active status and specific revision level before procurement. Confirm that the replacement part matches the required pinout and thermal characteristics. Ensure compatibility with existing gate drive circuits regarding the specified short-circuit withstand time and switching speeds.
Select this component when a balance between conduction and switching losses is critical for high-frequency applications. The positive temperature coefficient aids in parallel operation, making it suitable for higher power designs. Verify that the 5 μs short-circuit capability meets the protection requirements of the target system design.
This device belongs to the H series of IGBTs developed by STMicroelectronics. The series utilizes proprietary trench gate field-stop technology to maximize converter efficiency. It serves as an alternative to previous generations like the M series, offering different trade-offs between loss and robustness.
Public confirmed substitute: IXA17IF1200HJ (IXYS). Note that the IXA17IF1200HJ is obsolete. Verify pin compatibility and thermal resistance differences when substituting.