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The STGWA45HF60WDI is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. It features an integrated ultra-fast recovery antiparallel diode and is housed in a TO-247 package with three terminals for through-hole mounting. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 35 A, with a pulsed collector current rating of 70 A. It operates within a junction temperature range of -55 °C to +150 °C and has a maximum gate-emitter voltage of ±20 V.
Verify the specific ordering suffix against official STMicroelectronics documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer before placing orders.
Select this component when a 600 V IGBT with integrated fast recovery diode is required for high-efficiency switching applications. Ensure the thermal management design accommodates the TO-247 package dissipation capabilities at the intended operating currents.
This part belongs to the HF series of IGBTs from STMicroelectronics, designed for high-frequency operation. It complements other variants in the lineup offering different current ratings or voltage classes for diverse power electronics designs.
Direct substitutes include STGW45HF60WD and STGW45HF60W. Verify pinout compatibility and electrical parameter equivalence before substitution.