STGWA50H65DFB2

$4.01

Description：IGBT TRENCH FS 650V 86A TO247
Series：-

SKU:d9c96008a93f Category: Single IGBTs Brand: STMicroelectronics

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 86A TO247
Series：-
Mfr：STMicroelectronics
Package：Bulk
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：86 A
Current - Collector Pulsed (Icm)：150 A
Vce(on) (Max) @ Vge, Ic：2V @ 15V, 50A
Power - Max：272 W
Switching Energy：910µJ (on), 580µJ (off)
Input Type：Standard
Gate Charge：151 nC
Td (on/off) @ 25°C：28ns/115ns
Test Condition：400V, 50A, 4.7Ohm, 15V
Reverse Recovery Time (trr)：92 ns
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247 Long Leads
Grade：-
Qualification：-

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STGWA50H65DFB2

Overview

The STGWA50H65DFB2 is a high-speed N-channel IGBT from the HB2 series, utilizing trench gate field-stop technology. It features a 650 V collector-emitter voltage rating and a continuous collector current of 86 A at 25 °C case temperature. The device operates with a maximum junction temperature of 175 °C and includes an antiparallel diode with a forward current of 60 A. Key electrical parameters include a typical VCE(sat) of 1.55 V at 50 A, total power dissipation of 272 W, and a thermal resistance (junction-to-case) of 0.55 °C/W for the IGBT.

Feature Summary

Advanced trench gate field-stop structure optimized for conduction and switching energy reduction
Co-packaged very fast soft recovery diode to maximize efficiency in high-frequency applications
Positive VCE(sat) temperature coefficient enabling safer parallel operation
Minimized tail current and tight parameter distribution

Applications

Welding equipment
Single-phase input PFC converters
String and central solar inverters
Uninterruptible power supplies (UPS)
DC fast charging stations for electric vehicles

Procurement Notes

Verify component authenticity by cross-referencing the marking code G50H65DFB2 against official STMicroelectronics documentation. Confirm package type matches TO-247 long leads specifications. Ensure ordering suffixes align with specific environmental compliance grades if required. Request datasheet revision DS13185 Rev 3 or later for accurate electrical characteristics.

Selection Notes

Select this component for designs requiring high switching speeds and low conduction losses at 650 V. Evaluate thermal management based on the 0.55 °C/W junction-to-case resistance. Consider the positive temperature coefficient for paralleling multiple units. Verify that the 86 A continuous current rating meets peak load requirements under expected case temperatures.

Part Context

This part belongs to the HB2 series of IGBTs, representing an evolution of STMicroelectronics' trench gate field-stop technology. It is designed to balance conduction and switching performance for high-efficiency power conversion. The TO-247 long leads package facilitates through-hole mounting in industrial and automotive-grade power modules.